Scaling Nanoribbon Transistors with Monolayer TMDs (Stanford, Chalmers, Horiba, SLAC)


Researchers from Stanford University, Chalmers University of Technology, HORIBA Scientific, and SLAC National Accelerator Laboratory have published “Scaling nanoribbon transistors with monolayer transition metal dichalcogenides”. Abstract “Nanoscale transistors demand aggressive scaling of all channel dimensions—length, width and thickness. Two-dimensional semiconductors (2DS... » read more

Chip Industry Technical Paper Roundup: Oct. 7


New technical papers recently added to Semiconductor Engineering’s library: [table id=480 /] Find more semiconductor research papers here » read more

Scaling Nanoribbon Transistors Based on Monolayer 2D Semioconductors (Stanford, HORIBA, SLAC)


A new technical paper titled "Scaling High-Performance Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides" was published by researchers at Stanford University, HORIBA Scientific, and SLAC National Accelerator Laboratory. Abstract "Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional se... » read more