Chip Industry Technical Paper Roundup: June 8

IGZO FeFET AI memories; zero-knowledge proof acceleration; Rowhammer in monolithic 3D eDRAM; monolayer TMD nanoribbon transistors; graph attention virtual metrology; selective-area III-V MBE; open-source DNN accelerators; ultra-low-power AI-MCUs for transformers.

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New technical papers recently added to Semiconductor Engineering’s library:

Technical Paper Research Organizations
DTCO of NOR-Type IGZO FeFETs for 3D Heterogeneous AI Memories: A Read-Centric Perspective 🔗 imec, KU Leuven
ZK-Flex: A Flexible and Scalable Framework for Accelerating Zero-Knowledge Proofs 🔗 KAIST
Thermal- and Aging-Aware Rowhammer Vulnerability Analysis of Monolithically-Integrated IWO eDRAM for Edge Platforms 🔗 Arizona State University, Georgia Tech
Scaling nanoribbon transistors with monolayer transition metal dichalcogenides 🔗 Stanford University, Chalmers University of Technology, HORIBA Scientific, SLAC National Accelerator Laboratory
Graph Attention-Based Virtual Metrology for Film Deposition Processes in Semiconductor Manufacturing 🔗 Arizona State University, Intel Foundry
Surface Modification for III-V Selective Area Molecular Beam Epitaxy of Non-Selective Mask Materials 🔗 UT Austin, Harvard University
OpenEye: A Scalable Open-Source Hardware Accelerator for DNNs 🔗 University of Duisburg-Essen, Fraunhofer IMS
CHIMERA: A Flexible and Scalable 3.1 TOPS/W AI-MCU with Transformer Accelerator and 563 Gb/s Shared-L2 Memory Subsystem with QoS Guarantees 🔗 ETH Zurich, University of Bologna

Find more semiconductor research papers here.

 



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