tag: process-induced variability

FinFET Impacts For Reducing Physical IP Power Consumption

By Navraj Nandra - 07 Nov, 2013 - Comments: 0

FinFET devices were developed to address the need for improved gate control to suppress leakage current (IOFF); DIBL (drain-induced barrier lowering); and process‐induced variability below 32-nanometer. FinFET technology is now in volume production. To fully realize the advantages of FinFET devices, physical IP must follow the same trajectory that has benefited digital design. That include... » read more

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