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Modeling Effects Of Fluctuation Sources On Electrical Characteristics Of GAA Si NS MOSFETs Using ANN-Based ML


Researchers from National Yang Ming Chiao Tung University (Taiwan) published a technical paper titled "A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs." "This study has comprehensively analyzed the potential of the ANN-based ML strategy in modeling the effect of fluctuation sources on electrical characteristics of GAA Si NS MOSF... » read more

Bulk CMOS Vs. FD-SOI


The leading edge of the chip market increasingly is divided over whether to move to finFETs or whether to stay at 28nm using different materials and potentially even advanced packaging. Decisions about which approach to take frequently boil down to performance, power, form factor, cost, and the maturity of the individual technologies. All of those can vary by market, by vendor and by process... » read more