A Comparative Study With Horizontal and Verticals FETs (POSTECH, Georgia Tech)


A new technical paper titled "Vertical FET Optimization at Angstrom Nodes: A Comparative Study With Horizontal FET" was published by researchers at POSTECH and Georgia Institute of Technology. Abstract "For the first time, this study presents two novel vertical FET (VFET) structures and conducts a quantitative analysis to assess the competitiveness of VFET in comparison to two types of hori... » read more

New Patterning Options Emerging


Several fab tool vendors are rolling out the next wave of self-aligned patterning technologies amid the shift toward new devices at 10/7nm and beyond. Applied Materials, Lam Research and TEL are developing self-aligned technologies based on a variety of new approaches. The latest approach involves self-aligned patterning techniques with multi-color material schemes, which are designed for us... » read more