Optimal Surface Condition For Improved Cu-to-Cu Direct Bonding (NCHU, Osaka Univ.)


A new technical paper titled "Hybrid surface pre-treatments for enhancing copper-to-copper direct bonding" was published by researchers at National Chung Hsing University (NCHU) and Osaka University. Abstract excerpt "Three-dimensional integrated circuits (3D IC) require low-temperature, high-reliability Cu–Cu direct bonding to support fine-pitch vertical interconnects and heterogeneous... » read more

Information Flow Verification Framework Integrating Static and Formal Verification Methods At The Pre-Silicon Stage (U. of Florida)


Researchers from University of Florida published "IFV: Information Flow Verification at the Pre-silicon Stage Utilizing Static-Formal Methodology." Abstract "Modern system-on-chips (SoCs) are becoming prone to numerous security vulnerabilities due to their ever-growing complexity and size. Therefore, a comprehensive security verification framework is needed at the very early stage of the ... » read more

AFMTJ Model For In-Memory Computing (University of Arizona)


University of Arizona researchers published "Antiferromagnetic Tunnel Junctions (AFMTJs) for In-Memory Computing: Modeling and Case Study." Abstract "Antiferromagnetic Tunnel Junctions (AFMTJs) enable picosecond switching and femtojoule writes through ultrafast sublattice dynamics. We present the first end-to-end AFMTJ simulation framework integrating multi-sublattice Landau-Lifshitz-Gilb... » read more

3D Printing To Create Spatially Freeform, Nanomaterial-based Electronics (Rice, U. of Utah, NUS)


Researchers from Rice University, University of Utah and National University of Singapore (NUS) published "Three-dimensional printing of nanomaterials-based electronics with a metamaterial-inspired near-field electromagnetic structure." Abstract "Three-dimensional (3D) printing can create freeform architectures and electronics with unprecedented versatility. However, the full potential of... » read more

Rutile TiO2 As A Post-ZrO2 Dielectric Platform for Next-Gen DRAM Capacitors (KIST)


Researchers at Korea Institute of Science and Technology (KIST) published "Beyond ZrO2: Rutile TiO2 as the Dielectric Platform for Next-Generation DRAM Capacitors." Abstract "As DRAM technology nodes move into the sub-10 nm regime, capacitor scaling is increasingly constrained by both footprint loss and a hard physical thickness limit for the entire electrode–dielectric–electrode stac... » read more

Thermal Characterization For Power Semiconductor Packages (KATECH)


Researchers from Korea Automotive Technology Institute published "Analytical Extraction of Thermal Resistance in Power Semiconductors Using Structural Function Derivatives and Series Resistance Modeling." Abstract "Junction-to-case thermal resistance (RthJC ) is a critical parameter for assessing the reliability and thermal performance of power semiconductor devices. Conventional JEDEC-ba... » read more

Overview of Interface Dipole Engineering: Formation Mechanisms, Control Methods, And Emerging Applications (SNU, Sejong U.)


Researchers at Seoul National University and Sejong University published "Interface dipole modulation for gate dielectrics in Field-Effect transistors: a review." Abstract "Interface dipole engineering has recently become a key technology in the fabrication of semiconductor FETs. This review comprehensively covers the principles, methods, and applications of interface dipoles in gate diel... » read more

Comprehensive System-Level Performance Model For p-SRAM-Based IMC (USC, UW-Madison)


Researchers at USC and University of Wisconsin-Madison published "System-Level Performance Modeling of Photonic In-Memory Computing." Abstract "Photonic in-memory computing is a high-speed, low-energy alternative to traditional transistor-based digital computing that utilizes high photonic operating frequencies and bandwidths. In this work, we develop a comprehensive system-level performa... » read more

300mm Fab-Compatible Integration Flow for Planar 2D FETs (imec, KU Leuven)


Imec and KU Leuven researchers published "Integration and electrical evaluation of WS2 and MoS2 fets in a 300 mm pilot line." Abstract "2D materials have the potential to extend and augment the CMOS scaling roadmap. However, upscaling from lab-based demonstrators to 300 mm-compatible integration modules presents unique challenges. In this work, we address these challenges through ... » read more

A Manufacturing Approach That Brings Diamond Quantum Photonics Closer To Industrial Production (MIT, KAUST et al.)


"Foundry-Enabled Patterning of Diamond Quantum Microchiplets for Scalable Quantum Photonics" was published by researchers at MIT, KAUST, PhotonFoundries and MITRE. Abstract "Quantum technologies promise secure communication networks and powerful new forms of information processing, but building these systems at scale remains a major challenge. Diamond is an especially attractive material fo... » read more

← Older posts Newer posts →