A recent technical paper titled “Factors determining bond wave speed in wafer bonding” was published by researcher at Yokohama National University, Tokyo Electron Kyushu Limited and ANVOS Analytics.
Abstract
“Wafer-level direct bonding has become a critical process for advanced 3D architectures in logic, memory, and CMOS image sensors. The minimization of the wafer distortion caused by wafer bonding is essential for a precise overlay for the subsequent backside lithography. Although numerous studies have reported a strong connection between distortion and bond wave speed, discussion of the relationship between the pre-bonding surface and the bond wave speed has been inadequate. This study aimed to clarify the latter correlation using 300 mm wafers. Through the application of surface-sensitive techniques, we found that the plasma activation process enhances the amount of Si–OH groups on the surface, thereby enhancing the bond wave speed. Conversely, high-power plasma results in a slight decrease in bond wave speed because of the influence of excessive adsorbed water. In addition, the present study reveals no correlation between bond wave speed and adherence energy.”
Find the technical paper here. March 2025.
Sato, Ryosuke, Atsushi Nagata, Hayato Kitagawa, Ryota Ogata, Anton Myalitsin, and Fumihiro Inoue. “Factors determining bond wave speed in wafer bonding.” Japanese Journal of Applied Physics 64, no. 3 (2025): 03SP55.
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