Impact of Band-to-Band Tunneling in the CTL of V-NAND Flash Memory (U. of Seoul, Samsung)


A new technical paper, "Impact of Band-to-Band Tunneling in the Charge Trap Layer of NAND Flash Memory," was published by researchers from University of Seoul and Samsung Electronics. Abstract "This article investigates the impact of band-to-band tunneling (BTBT) occurring in the charge trap layer (CTL) of vertical NAND (V−NAND) flash memory under excessive erasure conditions and aggres... » read more

Device Characteristics of GAA-Structured CMOS and CTFET Under Varying Temperatures


A new technical paper titled "Vertical-Stack Nanowire Structure of MOS Inverter and TFET Inverter in Low-temperature Application" was published by researchers at National Tsing Hua University and National United University in Taiwan. Abstract "Tunneling field effect transistors (TFET) have emerged as promising candidates for integrated circuits beyond conventional metal oxide semiconductor ... » read more