A new technical paper, "Impact of Band-to-Band Tunneling in the Charge Trap Layer of NAND Flash Memory," was published by researchers from University of Seoul and Samsung Electronics.
Abstract
"This article investigates the impact of band-to-band tunneling (BTBT) occurring in the charge trap layer (CTL) of vertical NAND (V−NAND) flash memory under excessive erasure conditions and aggres...
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