RF GaN Gains Steam


Wide-bandgap semiconductors are hot topics these days. One wide-bandgap semi type--silicon carbide (SiC)--is the talk of the town and is gaining steam in electric vehicles and other systems. But let’s not forget about gallium nitride (GaN). GaN, a binary III-V material, has 10 times the breakdown field strength with double the electron mobility than silicon. GaN is used for LEDs, power ... » read more

Power Semi Wars Begin


Several vendors are rolling out the next wave of power semiconductors based on gallium nitride (GaN) and silicon carbide (SiC), setting the stage for a showdown against traditional silicon-based devices in the market. Power semiconductors are specialized transistors that incorporate different and competitive technologies like GaN, SiC and silicon. Power semis operate as a switch in high-volt... » read more

Week In Review: Manufacturing, Test


Chipmakers United Microelectronics Corp. (UMC) has satisfied all closing conditions for the full acquisition of Mie Fujitsu Semiconductor Ltd. (MIFS), the former 300mm wafer foundry joint venture between UMC and Fujitsu Semiconductor Ltd. (FSL). The completion of the acquisition is scheduled for Oct. 1. In 2014, FSL and UMC agreed for UMC to acquire a 15.9% stake in MIFS from FSL through pr... » read more

SiC Market Moves Into Overdrive


The silicon carbide (SiC) power semiconductor market continues to heat up in the automotive arena. In recent times, several automotive OEMs have formed a series of alliances with SiC device makers, and for good reason. In a major way, many automotive OEMs are entering or expanding their efforts in the battery-electric car market. SiC power semiconductors are among the key components used ... » read more

Week In Review: Manufacturing, Test


Chipmakers and OEMs Delphi Technologies is in volume production with a 800 volt silicon carbide (SiC) inverter for next-generation electric and hybrid vehicles. The inverter extends electric vehicle (EV) ranges. It also halves the charging times compared with today's 400 volt systems. In a separate announcement, Delphi Technologies and Cree have announce a partnership to utilize SiC semicon... » read more

Week In Review: Manufacturing, Test


AI chip boom or bust? The semiconductor industry is the most bullish about adopting artificial intelligence (AI), according to a new report from Accenture. Some 77% of semiconductor executives surveyed said they have adopted AI within their businesses or are piloting the technology. In addition, 63% of semiconductor executives expect that AI will have the greatest impact on their business over... » read more

GaN Versus Silicon For 5G


The global race to launch 5G mmWave frequencies could provide a long-anticipated market opportunity for gallium nitride (GaN) as an alternative to silicon. GaN is more power-efficient than silicon for 5G RF. In fact, GaN has been the heir apparent to silicon in 5G power amplifiers for years, especially when it comes to mmWave 5G networks. What makes it so attractive is its ability to efficie... » read more

Week In Review: Manufacturing, Test


Fab tools Lam Research has rolled out two new tools for use in the production of 3D NAND. The first tool, called the VECTOR DT, is geared for backside deposition. The second system, the EOS GS, is a wet etch tool for film removal on backside and bevel. Designed to control the wafer bow in 3D NAND manufacturing, the VECTOR DT system is the latest addition to Lam’s plasma-enhanced chemical ... » read more

200mm Cools Off, But Not For Long


After years of acute shortages, 200mm fab capacity is finally loosening up, but the supply/demand picture could soon change with several challenges on the horizon. 200mm fabs are older facilities with more mature processes, although they still churn out a multitude of today’s critical chips, such as analog, MEMS, RF and others. From 2016 to 2018, booming demand for these and other chips ca... » read more

A Novel Design Method of Highly Efficient Saturated Power Amplifier Based On Self-Generated Harmonic Currents


A novel design method without requiring the special harmonic termination circuit for a highly efficient power amplifier (PA) is proposed. The proposed PA is driven into saturated operation, from the linear to knee region, by adjusting the only fundamental load, and the saturated operation induces self-generated harmonic currents. The current and voltage waveforms can be shaped easily by the har... » read more

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