tag: deposition

Etch Processes Push Toward Higher Selectivity, Cost Control
By Laura Peters - 18 May, 2023 - Comments: 0

Plasma etching is perhaps the most essential process in semiconductor manufacturing, and possibly the most complex of all fab operations next to photolithography. Nearly half of all fab steps rely on a plasma, an energetic ionized gas, to do their work. Despite ever-shrinking transistor and memory cells, engineers continue to deliver reliable etch processes. “To sustainably create chips... » read more

A Deposition And Etch Technique To Lower Resistance Of Semiconductor Metal Lines
By Timothy Yang - 20 Apr, 2023 - Comments: 0

Copper's resistivity depends on its crystal structure, void volume, grain boundaries and material interface mismatch, which becomes more significant at smaller scales. The formation of copper (Cu) wires is traditionally done by etching a trench pattern in low-k silicon dioxide using a trench etch process, and subsequently filling the trench with Cu via a damascene flow. Unfortunately, this meth... » read more

Process Innovations Enabling Next-Gen SoCs and Memories
By Laura Peters - 20 Feb, 2023 - Comments: 0

Achieving improvements in performance in advanced SoCs and packages — those used in mobile applications, data centers, and AI — will require complex and potentially costly changes in architectures, materials, and core manufacturing processes. Among the options under consideration are new compute architectures, different materials, including thinner barrier layers and those with higher th... » read more

Making Chips Yield Faster At Leading-Edge Nodes
By Ed Sperling - 30 Nov, 2022 - Comments: 0

Simulation for semiconductor manufacturing is heating up, particularly at the most advanced nodes where data needs to be analyzed in the context of factors such as variation and defectivity rates. Semiconductor Engineering sat down with David Fried, corporate vice president of computational products at Lam Research, to talk about what's behind Lam's recent acquisition of Esgee Technologies, ... » read more

Chipmaking In The Third Dimension
By Krishnan Shrinivasan - 16 Jun, 2022 - Comments: 0

Every few months, new and improved electronics are introduced. They’re typically smaller, smarter, faster, have more bandwidth, are more power-efficient, etc. — all thanks to a new generation of advanced chips and processors. Our digital society has come to expect this steady drip of new devices as sure as the sun will rise tomorrow. Behind the scenes, however, engineers are working feve... » read more

Next-Gen Transistors
By Ed Sperling - 07 Mar, 2022 - Comments: 0

Nanosheets, or more generally, gate-all-around FETs, mark the next big shift in transistor structures at the most advanced nodes. David Fried, vice president of computational products at Lam Research, talks with Semiconductor Engineering about the advantages of using these new transistor types, along with myriad challenges at future nodes, particularly in the area of metrology. » read more

2D Semiconductors Make Progress, But Slowly
By Katherine Derbyshire - 28 Feb, 2022 - Comments: 2

Researchers are looking at a variety of new materials at future nodes, but progress remains slow. In recent years, 2D semiconductors have emerged as a leading potential solution to the problem of channel control in highly scaled transistors. As devices shrink, the channel thickness should shrink proportionally. Otherwise, the gate capacitance won’t be large enough to control the flow of cu... » read more

Nudging 2D semiconductors forward
By Katherine Derbyshire - 16 Sep, 2021 - Comments: 1

The buzz about 2D materials replacing silicon appears to be premature. While 2D semiconductors have emerged as potential successors, it's not clear when or even if that will happen. As Iuliana Radu, Imec's director of quantum and exploratory computing observed, the “end” of silicon has been predicted many times before. It is not clear when 2D semiconductors will need to be ready. In fac... » read more

Stacked Nanosheets And Forksheet FETs
By Katherine Derbyshire - 19 Aug, 2021 - Comments: 0

What comes next after gate-all-around FETs is still being worked out, but it likely will involve some version of stacked nanosheets. The design of advanced transistors is a tradeoff. On one hand, it takes less gate capacitance to control a thin channel. On the other hand, thin channels can’t carry as much drive current. Stacked nanosheet designs seek to reconcile these two objectives by... » read more

Thinner Channels With 2D Semiconductors
By Katherine Derbyshire - 21 Jun, 2021 - Comments: 0

Moving to future nodes will require more than just smaller features. At 3/2nm and beyond, new materials are likely to be added, but which ones and exactly when will depend upon an explosion of material science research underway at universities and companies around the globe. With field-effect transistors, a voltage applied to the gate creates an electric field in the channel, bending the ban... » read more

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