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UT Dallas: Electronic, Thermodynamic & Dielectric Properties of Two Novel vdW Materials


New technical paper titled "A First-Principles Study on the Electronic, Thermodynamic and Dielectric Properties of Monolayer Ca(OH)2 and Mg(OH)2," from University of Texas at Dallas. With funding support from National Science Foundation and U.S. Department of Defense,  Defense Threat Reduction Agency. Abstract "We perform first-principles calculations to explore the electronic, thermodynam... » read more

Reliability After Planar Silicon


Negative bias temperature instability (NBTI) poses a very serious reliability challenge for highly scaled planar silicon transistors, as previously discussed. However, the conventional planar silicon transistor appears to be nearing the end of its life for other reasons, too. The mobility of carriers in silicon limits switching speed even as it becomes more difficult to maintain sufficient elec... » read more

The End Of Silicon?


As transistors shrink, not all device parameters scale at the same rate—and therein lies a potentially huge problem. In recent years, manufacturers have been able to reduce equivalent oxide thickness (EOT) more quickly than operating voltage. As a result, the electric field present in the channel and gate dielectric has been increasing. Moreover, EOT reduction is achieved in part by reduci... » read more