tag: EUV

Manufacturing Bits: Jan. 10
By Mark LaPedus - 10 Jan, 2017 - Comments: 2

Atom interferometers The Massachusetts Institute of Technology (MIT) has devised one of the world’s most accurate atom interferometers. Interferometry is a common measurement technique. Basically, the technology looks at electromagnetic waves. The waves are superimposed to extract information. One interferometry technology type, called an atom interferometer, utilizes the waves of ato... » read more

BEOL Issues At 10nm And 7nm (part 2)
By Ed Sperling - 04 Jan, 2017 - Comments: 3

Semiconductor Engineering sat down to discuss problems with the back end of line at leading-edge nodes with Craig Child, senior manager and deputy director for [getentity id="22819" e_name="GlobalFoundries'"] advanced technology development integration unit; Paul Besser, senior technology director at [getentity id="22820" comment="Lam Research"]; David Fried, CTO at [getentity id="22210" e_name... » read more

Reflecting Back On 2016
By Brian Bailey - 22 Dec, 2016 - Comments: 0

Anyone can make a prediction, and sometimes the more outlandish they are the more they get noticed. But at the end of the year some people hit the mark while others may have been way off. Many people simply make projections based on the current trajectory of trends, while others look for the potential discontinuities that may lie ahead. Semiconductor Engineering examines the projections made... » read more

Foundries See Mixed Future
By Mark LaPedus - 21 Dec, 2016 - Comments: 1

Amid a tumultuous business environment, the silicon foundry industry is projected to see steady growth in a number of process segments in 2017. As in past years, the foundry market is expected to grow faster than the overall IC industry in 2017. But at the same time, the IC industry—the foundry customer base—continues to witness a frenetic wave of merger and acquisition activity. Basical... » read more

Uncertainty Grows For 5nm, 3nm
By Mark LaPedus - 19 Dec, 2016 - Comments: 4

As several chipmakers ramp up their 10nm finFET processes, with 7nm just around the corner, R&D has begun for 5nm and beyond. In fact, some are already moving full speed ahead in the arena. [getentity id="22586" comment="TSMC"] recently announced plans to build a new fab in Taiwan at a cost of $15.7 billion. The proposed fab is targeted to manufacture TSMC’s 5nm and 3nm processes, whic... » read more

Morphing Moore’s Law
By Ed Sperling - 15 Dec, 2016 - Comments: 0

In 1965, Gordon Moore defined a timetable for doubling the number of transistors on a piece of silicon every two years. The law, as he originally defined it, is now hopelessly outdated. Any attempts to apply it to the most advanced chips today are a stretch at best, and complete fiction at worst. No one is on a two-year cadence between process nodes anymore—not even Intel. In fact, no one ... » read more

Inside Advanced Patterning
By Mark LaPedus - 15 Dec, 2016 - Comments: 0

Prabu Raja, group vice president and general manager for the Patterning and Packaging Group at [getentity id="22817" e_name="Applied Materials"], sat down with Semiconductor Engineering to discuss the trends in patterning, selective processes and other topics. Raja is also a fellow at Applied Materials. What follows are excerpts of that conversion. SE: From your standpoint, what are the big... » read more

BEOL Issues At 10nm And 7nm (Part 1)
By Ed Sperling - 15 Dec, 2016 - Comments: 5

Semiconductor Engineering sat down to discuss problems with the back end of line at leading-edge nodes with Craig Child, senior manager and deputy director for [getentity id="22819" e_name="GlobalFoundries'"] advanced technology development integration unit; Paul Besser, senior technology director at [getentity id="22820" comment="Lam Research"]; David Fried, CTO at [getentity id="22210" e_name... » read more

Multi-Patterning Issues At 7nm, 5nm
By Ed Sperling - 28 Nov, 2016 - Comments: 13

Continuing to rely on 193nm immersion lithography with multiple patterning is becoming much more difficult at 7nm and 5nm. With the help of various resolution enhancement techniques, optical lithography using a deep ultraviolet excimer laser has been the workhorse patterning technology in the fab since the early 1980s. It is so closely tied with the continuation of [getkc id="74" comment="Mo... » read more

Inside EUV Resists
By Mark LaPedus - 17 Nov, 2016 - Comments: 3

Andrew Grenville, chief executive of resist maker Inpria, sat down with Semiconductor Engineering to talk about photoresists for extreme ultraviolet (EUV) lithography. What follows are excerpts of that conversation. SE: Photoresists are a critical part of lithography. Resists are light-sensitive materials. They form patterns on a surface when exposed to light. For EUV, they are critical. Wha... » read more

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