tag: finFETs

Can Intel Dethrone The Foundry Giants?
By Mark LaPedus - 12 Dec, 2013 - Comments: 3

The leading-edge foundry business isn’t for the faint of heart. It requires deep pockets and sound technology to keep pace in the chip-scaling race. And despite pouring billions of dollars into new fabs and processes, foundries are competing for fewer customers at each node. Given the difficult business conditions, only a handful of vendors can afford to compete in the high-end foundry bus... » read more

Challenges Mount In Inspection And Metrology
By Mark LaPedus - 12 Dec, 2013 - Comments: 0

Chipmakers are moving full speed ahead toward smaller process nodes, thereby driving up the costs and complexities in chip manufacturing. The migrations also are putting enormous stress on nearly all points of the fab flow, including a critical but unsung part of the business—process control. Process control involves 20 or so different segments in the inspection and metrology arena. Genera... » read more

What Just Happened?
By Brian Fuller - 12 Dec, 2013 - Comments: 0

Boy that went by fast. One minute, I’m waking up a little groggy on New Year’s Day, wondering whether the silicon industry is ever going to rebound. The next minute, it’s today and the industry had a good year, and is, in many ways, a completely different animal than it was 12 months ago. Innovation is evolutionary, sure. But if you really think about 2013, you can make an argument tha... » read more

New Challenges Emerge With FinFETs
By Ed Sperling - 05 Dec, 2013 - Comments: 0

Working at advanced process nodes is always tricky. There are new things to worry about and more rules to deal with initially, yet the promised benefit is improved performance, power and area, or cost. But at the next process node, and the one after that, there are so many variables coming into play that trying to make sense of the PPA equation is becoming much more difficult. Early reports ... » read more

How Reliable Are Interconnects In 16nm FinFET Designs?
By Arvind Vel - 05 Dec, 2013 - Comments: 0

The 16nm FinFET process node is rapidly becoming the preferred choice for advanced Integrated Circuit (IC) designs. The 16nm node’s lower standby leakage characteristics and increased drive strength capability enable IC designers to push the boundaries of low power – high performance designs. However, the choice of the node is also accompanied by reduced reliability margins, requiring desig... » read more

Seven Ways To Improve PPA Before Moving To FinFETs
By Ed Sperling - 05 Dec, 2013 - Comments: 0

Henry Ford wrote in his autobiography, “Any customer can have a car painted any color that he wants so long as it is black.” And for decades, the semiconductor industry has marched to a similar theme set by Moore’s Law. But with the transition to finFETs harder than it first appeared, questions are beginning to pop up that is fueling a new level of confusion. While the growing list of... » read more

The Next Dimension
By Ed Sperling - 14 Nov, 2013 - Comments: 0

It’s hard to say definitively whether this is a trend or an aberration, but after what appears to have been a slam-dunk sprint to the finish line with finFETs some companies are re-evaluating their alternatives based upon return on investment. In place of perpetually shrinking features—and looming multipatterning at the next node—there is renewed interest in staying at 28nm with FDSOI,... » read more

The Week In Review: Manufacturing & Design
By Mark LaPedus - 08 Nov, 2013 - Comments: 0

GT Advanced Technologies has entered into a multi-year supply agreement with Apple for sapphire materials. GT will own and operate its furnaces and related equipment to produce the sapphire materials at an Apple-owned facility in Arizona. GT expects to employ more than 700 people in the facility. Apple will provide GT with a prepayment of about $578 million. “We believe Apple likely has signi... » read more

FinFET Impacts For Reducing Physical IP Power Consumption
By Navraj Nandra - 07 Nov, 2013 - Comments: 0

FinFET devices were developed to address the need for improved gate control to suppress leakage current (IOFF); DIBL (drain-induced barrier lowering); and process‐induced variability below 32-nanometer. FinFET technology is now in volume production. To fully realize the advantages of FinFET devices, physical IP must follow the same trajectory that has benefited digital design. That include... » read more

Paving The Way To 16/14nm
By Ed Sperling - 07 Nov, 2013 - Comments: 0

The move to the next stop on the Moore’s Law road map isn’t getting any less expensive or easier, but it is becoming more predictable. Tools and programs are being expanded to address physical effects such as electrostatic discharge (ESD), electromigration and thermal effects from increased current density. Any or all of these three checklist items can affect the reliability of a chip. A... » read more

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