28nm Powers TSMC Forward (Part Deux)


TSMC’s financial results for the 4th Quarter of 2013 and for the full year were announced just a few weeks ago, with TSMC stating it had again achieved record sales and profits. TSMC continues to own the 28nm foundry market. TSMC a year ago stated plans to have 20nm as its next technology node in production in 2014 and it looks to be delivering on this projected claim with the announcement th... » read more

ESD Signoff No Longer A “Nice to Have” In FinFET Design Era


As the semiconductor industry transitions to finFETs, reliability challenges are increasing. ESD designers are challenged with new issues that would require significant rethinking and redesign of their existing ESD protection strategy. With significant complexity embedded in the silicon, failure analysis and silicon debug is challenging and time consuming even to the ESD experts. Technology ... » read more

The Road Ahead For 2014: Tools


In the third and final part of this predictions series we see the natural conclusion of market shifts that are driving changes in semiconductors, and which in turn drive the tools and IP needed to create those systems. To be expected, the changes fall into a few areas: New tools, techniques and changes required for smaller geometries; A migration to higher-levels of abstraction and the... » read more

What’s After CMOS?


Chipmakers continue to scale the CMOS transistor to finer geometries, but the question is for how much longer. The current thinking is that the CMOS transistor could scale at least to the 3nm node in the 2021 timeframe. And then, CMOS could run out of gas, prompting the need for a new switch technology. So what’s after the CMOS-based transistor? Carbon nanotubes and graphene get the most a... » read more

The Road Ahead for 2014: Semiconductors


Last week, Semiconductor Engineering examined the 2014 predictions from several thought leaders in the industry and published those predictions that related to general market trends. Many of those predictions require some advances in semiconductor technologies and fabrications capabilities. It is those predictions that will be examined in this part, followed next week by the predictions related... » read more

Executive Viewpoint: Qualcomm On Process Technology


Semiconductor Engineering sat down to discuss current and future process technology challenges with Geoffrey Yeap, vice president of technology at Qualcomm. SE: You have pointed out there is a fundamental shift taking place at the 28nm logic node. This is the first node in which mobile chips have been ramped up first within the foundries, ahead of computing-based ICs. Many believe that 28nm ... » read more

Germanium wedge-FETs pry away misfit dislocations


Any approach to alternative channel integration must consider the lattice mismatch between silicon and other channel materials. Some schemes, such as IMEC’s selective epitaxy, view the lattice mismatch as an obstacle and look for ways to minimize its effects. This point of view certainly has merit: misfit dislocations do significantly degrade transistor performance. Still, back in 2011 Shu-Ha... » read more

Fab Tool Industry Has Lost Its Way


The relationship between chipmakers and fab tool vendors has always been a bit rocky, but the supply chain has generally worked. Chipmakers demand a tool for a particular application. Then, tool makers attempt to deliver the goods, and ask few, if any, questions. Now, fab tool executives are beginning to ask some tough questions about the industry. And the tension is mounting between equ... » read more

Industry Restructures Around Cost


Talk to any semiconductor executive these days about what’s next for their company and you’ll probably encounter the same perspective—cost will drive future design decisions. Dig a little further, however, and you’ll find no consistent strategy for reducing that cost. While the industry has three very viable solutions for improving the power and performance characteristics of SoCs—... » read more

Alternative Channel Materials For Post-Silicon FinFETs


At first glance, other semiconductors always have looked more attractive to device designers than silicon. Both germanium and III-V compound semiconductors have higher carrier mobility, allowing faster switching at the same device size. And yet, as manufacturers begin to consider alternative channel materials for sub-10nm devices, the industry is remembering why silicon became a standard in ... » read more

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