What’s Next For AI, Quantum Chips


Semiconductor Engineering sat down to discuss the latest R&D trends with Luc Van den hove, president and chief executive of Imec; Emmanuel Sabonnadière, chief executive of Leti; and An Chen, executive director for the Nanoelectronics Research Initiative at the Semiconductor Research Corp. (SRC). Chen is on assignment from IBM. What follows are excerpts of those conversations, which took pl... » read more

Week In Review: Manufacturing, Test


Trade and fab equipment The SEMI Industry Strategy Symposium (ISS) this week opened with the theme “Golden Age of Semiconductor: Enabling the Next Industrial Revolution.” The annual three-day conference gave the year’s first outlook of the global electronics manufacturing industry. Click here for a recap. SEMI and Imec are joining forces to drive innovation and deepen industry align... » read more

Manufacturing Bits: Jan. 2


Better nanowire MOSFETs At the recent IEEE International Electron Devices Meeting (IEDM), Imec and Applied Materials presented a paper on a new and improved way to fabricate vertically stacked gate-all-around MOSFETs. More specifically, Imec and Applied reported on process improvements for a silicon nanowire MOSFET, which is integrated in a CMOS dual work function metal replacement metal ga... » read more

What’s the Right Path For Scaling?


The growing challenges of traditional chip scaling at advanced nodes are prompting the industry to take a harder look at different options for future devices. Scaling is still on the list, with the industry laying plans for 5nm and beyond. But less conventional approaches are becoming more viable and gaining traction, as well, including advanced packaging and in-memory computing. Some option... » read more

Interest Grows In Ferroelectric Devices


Ferroelectric FETs and memories are beginning to show promise as researchers begin developing and testing next-generation transistors. One measure of the efficiency of a transistor is the subthreshold swing, which is the change in gate voltage needed to increase the drain current by one order of magnitude. Measured in units of millivolts per decade, in conventional MOSFETs it is limited to k... » read more

Week in Review: IoT, Security, Auto


Internet of Things Arm made five 2019 predictions for the Internet of Things. They are: The intelligent home goes mainstream; personalized delivery options; improved health-care service; smart cities seek to improve revenue streams and citizen engagement; and smart buildings use more technology for efficiencies. The company also commissioned a worldwide survey of 2,000 consumers, conducted by ... » read more

Week In Review: Design, Low Power


The MIPI Alliance released MIPI I3C Basic v1.0, a subset of the MIPI I3C sensor interface specification that bundles 20 of the most commonly needed I3C features for developers and other standards organizations. The royalty-free specification includes backward compatibility with I2C, 12.5 MHz multi-drop bus that is over 12 times faster than I2C supports, in-band interrupts to allow slaves to not... » read more

N7 FinFET Self-Aligned Quadruple Patterning Modeling


Authors: Sylvain Baudot, Sofiane Guissi, Alexey P. Milenin, Joseph Ervin, Tom Schram (IMEC and COVENTOR) In this paper, we model fin pitch walk based on a process flow simulation using the Coventor SEMulator3D virtual platform. A taper angle of the fin core is introduced into the model to provide good agreement with silicon data. The impact on various Self-Aligned Quadruple Patterning proces... » read more

Week In Review: Manufacturing, Test


Fab tools/manufacturing Lam Research has accepted Martin Anstice’s resignation as chief executive and a member of the board. Lam has named Tim Archer as president and chief executive effective immediately. Archer, who served as Lam’s president and chief operating officer, has been named to the board. One analyst provided a comment on the situation at Lam. “In our view, Mr. Archer is very... » read more

Week In Review: Manufacturing, Test


Chipmakers GlobalFoundries has announced that its advanced silicon-germanium (SiGe) offering is available for prototyping on 300mm wafers. GF’s SiGe technology has been shipping on its 200mm production line in Burlington, Vt. The technology, a 90nm SiGe process, is moving to 300mm wafers at GF’s Fab 10 facility in East Fishkill, N.Y. The SiGe technology is called 9HP. “The increasing ... » read more

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