tag: Samsung

Being Different Is Bad
By Ed Sperling - 23 Aug, 2012 - Comments: 0

By Ann Steffora Mutschler Today’s SoCs contain as much as 80% existing IP that either has been re-used from previous projects or obtained from a third party. Models are created of this hardware IP, as well as new portions of the design, in order to create a virtual prototype that allows the engineering team to see the complete system by running software and applications. While this a... » read more

Why the Big Players Like 450mm Wafers
By Chris Mack - 20 Aug, 2012 - Comments: 0

The reason semiconductor manufacturers like the idea of 450-mm wafers is easy to understand:  bigger wafers should lower the per-chip cost of manufacturing.  But as I mentioned in my last post, this per-chip cost advantage doesn’t apply to lithography.  Each time a wafer size is increased, only the non-litho (per-chip) costs go down, and so lithography costs take up a bigger portion of the... » read more

G450C To Align Vendors During 450mm Transition
By Ed Sperling - 16 Aug, 2012 - Comments: 0

By David Lammers Innovation and synchronization among multiple companies do not often go hand in hand. But for the 450mm wafer transition to provide its full benefits, chip makers and their suppliers will need to do more than a simple wafer size scale up. That may lead the Global 450 Consortium (G450C) to serve as the proving ground for efforts to more closely match the electrical results o... » read more

What’s After NAND Flash?
By Ed Sperling - 16 Aug, 2012 - Comments: 0

By Mark LaPedus For years, many have predicted the end of flash memory scaling, particularly NAND, but the technology continues to defy the odds as it moves down the process curve. Still, there are signs that the floating gate structure in today’s flash memory is on its last legs. The floating gate is seeing an undesirable reduction in the control gate to capacitive coupling ratio. And ... » read more

Experts At The Table: Multipatterning
By Ed Sperling - 31 Jul, 2012 - Comments: 0

By Ed Sperling Semiconductor Manufacturing & Design sat down with Michael White, physical verification product line manager at Mentor Graphics; Luigi Capodieci, R&D fellow at GlobalFoundries; Lars Liebmann, IBM distinguished engineer; Rob Aitken, ARM fellow; Jean-Pierre Geronimi, CAD director at STMicroelectronics; and Kuang-Kuo Lin, director of foundry design enablement at Samsung El... » read more

Firms Rethink Fabless-Foundry Model
By Ed Sperling - 31 Jul, 2012 - Comments: 0

By Mark LaPedus As chipmakers move toward 20nm designs, finFETs and 3D stacked devices, the industry is beginning to re-think the fabless-foundry model. Leading-edge foundries are finally getting serious about the “virtual IDM” model, in which vendors will act more like integrated device manufacturers (IDMs), as opposed to being mere production partners. In this model, the found... » read more

Experts At The Table: Pain Points
By Ed Sperling - 12 Jul, 2012 - Comments: 0

By Ed Sperling Low-Power/High-Performance Engineering sat down with Vinod Kariat, a Cadence fellow; Premal Buch, vice president of software engineering at Altera; Vic Kulkarni, general manager of Apache Design; Bernard Murphy, CTO at Atrenta, and Laurent Moll, CTO at Arteris. What follows are excerpts of that conversation. LPHP: Where will the pain points be going forward? Kariat: 20nm is... » read more

Disaggregation And Re-aggregation
By Ed Sperling - 02 Jul, 2012 - Comments: 0

The proliferation of platforms, subsystems and IP of any sort, as well as the move to stack die in 2.5D configurations, will force a realignment of the ecosystem. For the moment, it appears that vertically integrated companies such as Apple and Samsung have a distinct advantage. It remains to be seen just how substantial that advantage really is, however. As chips become a collection of more... » read more

CNSE Readying NFX Fab for G450C, EUV Efforts
By Ed Sperling - 26 Jun, 2012 - Comments: 0

By David Lammers Two key areas of the semiconductor industry’s future—the 450mm wafer transition and EUV lithography—are the focus of the new NFX (NanoFab Xtension) building now under construction at the College of Nanoscale Science and Engineering (CNSE) of the University at Albany. [caption id="attachment_6322" align="alignright" width="120" caption="Alain Kaloyeros"][/caption] T... » read more

Fabless-Foundry Model Under Stress
By Ed Sperling - 26 Jun, 2012 - Comments: 0

By Mark LaPedus The semiconductor roadmap was once a smooth and straightforward path, but chipmakers face a bumpy and challenging ride as they migrate to the 20nm node and beyond. Among the challenges seen on the horizon are the advent of 3D stacking, 450mm fabs, new transistor architectures, multi-patterning, and the questionable availability of extreme ultraviolet (EUV) lithography. ... » read more

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