Using More Germanium In Chips for Energy Efficiency & Achievable Clock Frequencies


A new technical paper titled "Composition Dependent Electrical Transport in Si1−xGex Nanosheets with Monolithic Single-Elementary Al Contacts" was published by researchers at TU Wien (Vienna University of Technology), Johannes Kepler University, CEA-LETI, and Swiss Federal Laboratories for Materials Science and Technology. Find the technical paper here. Published September 2022. Abstrac... » read more

Cost Characteristics of the 2.5D Chiplet-Based SiP System


A technical paper titled "Cost-Aware Exploration for Chiplet-Based Architecture with Advanced Packaging Technologies" was published by researchers at UCSB, University of California, Santa Barbara. Abstract: "The chiplet-based System-in-Package~(SiP) technology enables more design flexibility via various inter-chiplet connection and heterogeneous integration. However, it is not known how to ... » read more

Energy of Computing As A Key Design Aspect (SLAC/Stanford, MIT)


A technical paper titled "Trends in Energy Estimates for Computing in AI/Machine Learning Accelerators, Supercomputers, and Compute-Intensive Applications" was published by researchers at SLAC/Stanford University and MIT. Abstract: "We examine the computational energy requirements of different systems driven by the geometrical scaling law, and increasing use of Artificial Intelligence or Ma... » read more

Improving the Electrical Performance and Low-Frequency Noise Properties of p-Type TFET


A new technical paper titled "Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET" was published by researchers at Chungnam National University and Korea Polytechnic College. "This study investigated the effects of high-pressure deuterium (D2) annealing and hydrogen (H2) annealing on the electrical performance and low-frequency noise (LFN) of a fully depleted silic... » read more

Novel Multi-Independent Gate-Controlled FinFET Technology


A new technical paper titled "Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)" was published by researchers at Changzhou University. Abstract: "This study illustrates a type of novel device. Integrating fin field-effect transistors (FinFETs) with current silicon-on-insulator (SOI) wafers provides an excellent platform to fabricate advanced specific device... » read more

Red MicroLEDs Three Orders of Magnitude Smaller in Surface Area


A technical paper titled "N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs" was published by researchers at University of Michigan. The researchers created "red-microLEDs that are nearly three orders of magnitude smaller in surface area than previously reported devices while exhibiting external quantum efficiency of ~1.2%," according to the University o... » read more

Scalable Optical AI Accelerator Based on a Crossbar Architecture


A new technical paper titled "Scalable Coherent Optical Crossbar Architecture using PCM for AI Acceleration" was published by researchers at University of Washington. Abstract: "Optical computing has been recently proposed as a new compute paradigm to meet the demands of future AI/ML workloads in datacenters and supercomputers. However, proposed implementations so far suffer from lack of sc... » read more

Using BDA To to Predict SAQP Pitch Walk


A new technical paper titled "Bayesian dropout approximation in deep learning neural networks: analysis of self-aligned quadruple patterning" was published by researchers at IBM TJ Watson Research Center and Rensselaer Polytechnic Institute. Find the technical paper here. Published November 2022.  Open Access. Scott D. Halle, Derren N. Dunn, Allen H. Gabor, Max O. Bloomfield, and Mark Sh... » read more

L-FinFET Neuron For A Highly Scalable Capacitive Neural Network (KAIST)


A new technical paper titled "An Artificial Neuron with a Leaky Fin-Shaped Field-Effect Transistor for a Highly Scalable Capacitive Neural Network" was published by researchers at KAIST (Korea Advanced Institute of Science and Technology). “In commercialized flash memory, tunnelling oxide prevents the trapped charges from escaping for better memory ability. In our proposed FinFET neuron, t... » read more

Full Wafer Integration of Aggressively Scaled 2D-Based Logic Circuits (Imec)


A technical paper titled "Challenges of Wafer-Scale Integration of 2D Semiconductors for High-Performance Transistor Circuits" was published by researchers at Imec. "The introduction of highly scaled 2D-based circuits for high-performance logic applications in production is projected to be implemented after the Si-sheet-based CFET devices. Here, a view on the requirements needed for full waf... » read more

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