Why nanosheets and gate-all-around FETs are the next big shift in transistor structures.
Nanosheets, or more generally, gate-all-around FETs, mark the next big shift in transistor structures at the most advanced nodes. David Fried, vice president of computational products at Lam Research, talks with Semiconductor Engineering about the advantages of using these new transistor types, along with myriad challenges at future nodes, particularly in the area of metrology.
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