Atom Probe Framework Tracks Phase Instability In Si-Doped Gallium Oxide (SUNY, Ohio State, LLNL)


Researchers from University at Buffalo-SUNY, The Ohio State University, and Lawrence Livermore National Laboratory published a technical paper titled “Coordination-Sensitive Nanoscale Analysis of Defect-Driven Phase Transformation in Si-Doped (AlxGa1−x)2O3.” Abstract excerpt: "Defect-driven phase instability critically influences the structural reliability of ultrawide bandgap oxide... » read more

Measuring Atoms And Beyond


David Seiler, chief of the Engineering Physics Division within the Physical Measurement Laboratory at the National Institute of Standards and Technology (NIST), sat down with Semiconductor Engineering to discuss the current and future directions of metrology. NIST, a physical science laboratory, is part of the U.S. Department of Commerce. What follows are excerpts of that conversation. SE: W... » read more