tag: CMP

Fab Tool R&D And Ramen Noodles
By Mark LaPedus - 22 Jan, 2015 - Comments: 0

The semiconductor equipment and materials industry has always been a tough business. Over the years, vendors have been under pressure to develop new technologies for a shrinking but demanding customer base. And as a result, many vendors could not keep up, or elected to exit the business, causing a massive shakeout in the industry. It isn’t getting any easier, though. Today, tool and... » read more

Design Rules Explode At New Nodes
By Ed Sperling - 17 Nov, 2014 - Comments: 0

Semiconductor Engineering sat down changing design rules with Sergey Shumarayev, senior director of custom IP design at Altera; Luigi Capodieci, R&D fellow at [getentity id="22819" comment="GlobalFoundries"]; Michael White, director of product marketing for Calibre Physical Verification at [getentity id="22017" e_name="Mentor Graphics"], and Coby Zelnik, CEO of [getentity id="22478" e_name=... » read more

Will Materials Derail Moore’s Law?
By Mark LaPedus - 13 Nov, 2014 - Comments: 0

Is Moore’s Law slowing down? Clearly, chipmakers are struggling to keep up with Moore’s Law these days. But one sometimes forgotten and critical technology could easily derail Moore’s Law--materials. In fact, the cost and complexity for electronic materials are increasing at each node. “Chemical and gas commodity procurement spends are growing rapidly due to process complexity and un... » read more

A Novel Approach To Dummy Fill For Analog Designs
By Mentor, a Siemens Business - 21 Aug, 2014 - Comments: 0

With small geometry silicon processes, additional nonfunctional geometric structures are required to maintain layer planarity during the chemical/mechanical polishing (CMP) phase of processing. The automated layout flows to generate such geometries tend to be designed primarily for large system on chip (SOC) digital designs. When applied to mixed-signal layouts, these flows have been seen to ha... » read more

Challenges In 3D Resists
By Katherine Derbyshire - 24 Mar, 2014 - Comments: 2

3D integration straddles the line between CMOS fabs and packaging and assembly houses. Depending on the structure being fabricated, the most appropriate process might be more “CMOS-like” or more “package-like.” For example, in CMOS fabs lithography means spin-on photoresist, exposed by a high precision stepper. Inherent in this approach is an assumption that the wafer surface is flat... » read more

Front End Comes To The Back End
By Jeff Chappell - 19 Sep, 2013 - Comments: 0

By Jeff Chappell For outsourced assembly and test (OSAT) houses either planning for or already offering through-silicon via (TSV) capability for their 3D packaging efforts, this has meant the front end is coming to the back end, in a manner of speaking. A bit of an exaggeration perhaps, as most generalizations are. But thanks to TSVs, in a very real sense some of what would typically be the... » read more

Semiconductor Fab Materials Outlook
By SEMI - 16 Aug, 2013 - Comments: 0

By Dan Tracy While segments of the global economy are slowing and uncertainty is once again on the rise, fundamental unit trends for semiconductor materials have improved in recent months and growth expectations for the fab materials market remain modest for 2012 and into 2013. Three-month shipment data shows silicon shipments—from the wafer suppliers to the fabs—during the current cycl... » read more

SPOTLIGHT ON FD-SOI, FINFETS AT IEEE SOI CONFERENCE
;1-4 OCT, NAPA
By Various Writers - 25 Sep, 2012 - Comments: 0

The 38th annual SOI Conference is coming right up. Sponsored by IEEE Electron Devices Society, this is the only dedicated SOI conference covering the full technology chain from materials to devices, circuits and system applications. Chaired this year by Gosia Jurczak (manager of the Memories Program at imec), this excellent conference is well worth attending. It’s where the giants of the ... » read more

Challenges Mount For Interconnect
By Mark LaPedus - 26 Jun, 2012 - Comments: 0

By Mark LaPedus There are a plethora of chip-manufacturing challenges for the 20nm node and beyond. When asked what are the top challenges facing leading-edge chip makers today, Gary Patton, vice president of the Semiconductor Research and Development Center at IBM, said it boils down to two major hurdles: lithography and the interconnect. The problems with lithography are well documented.... » read more

CMP, ST et al offer 28nm FD-SOI for prototyping, research
By Various Writers - 06 Nov, 2011 - Comments: 0

Posted by Adele Hars, Editor-in-Chief, Advanced Substrate News ~  ~ What would a port to 28nm FD-SOI do for your design?  A recent announcement by CMP, STMicroelectronics and Soitec invites you to find out.  Specifically, ST’s CMOS 28nm Fully Depleted Silicon-On-Insulator (FD-SOI) process – which uses innovative silicon substrates from Soitec and incorporates robust, compact model... » read more

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