When Semiconductor Materials Misbehave


Key Takeaways Material behavior in production depends on the process context that no development environment can fully replicate. In advanced packaging, the interactions that cross domain boundaries are increasingly where failures originate. The most accurate materials data is also the most commercially sensitive, leaving simulation models calibrated against generic inputs rather tha... » read more

Breaking The Copper Bottleneck With Molybdenum Hybrid Metallization


Scaling the back end of line (BEOL) in advanced semiconductor logic devices is a major challenge. Metal lines and via filling in BEOL have historically used copper (Cu) as the electrical conductor. But as device dimensions shrink, Cu use has become problematic. The small critical dimensions (CD) of the Cu metal lines and vias in the latest BEOL structures have created an increase in resistance,... » read more

Precision Under Pressure: Managing Materials Complexity In Advanced Packaging


In the race to extend Moore's Law through advanced packaging, the limits of precision are no longer defined solely by lithography. Increasingly, they are dictated by the unpredictable behavior of materials. Semiconductor packaging today is no longer limited to just silicon and copper. It includes an expanding range of polymers, adhesives, dielectrics, exotic metals, along with substrates suc... » read more

Molybdenum: Transforming Semiconductor Manufacturing For Next-Generation Technologies


One trillion semiconductors produced in a single year. A digital foundation powering AI's explosive growth. The next frontier requires chips that are smaller, faster, and exponentially more powerful. A new white paper from Counterpoint Research  reveals how advanced metallization—specifically molybdenum—is becoming a critical enabler for semiconductor manufacturing in this new era. Th... » read more

Promising Materials Beyond Silicon (TI, AIXTRON, imec)


A new technical paper titled "Future materials for beyond Si integrated circuits: a Perspective" was published by researchers at Texas Instruments, AIXTRON SE and imec. Abstract: "The integration of novel materials has been pivotal in advancing Si-based devices ever since Si became the preferred material for transistors, and later, integrated circuits. New materials have rapidly been adopte... » read more

Wrestling With Variation In Advanced Node Designs


Variation is becoming a major headache at advanced nodes, and issues that used to be dealt with in the fab now must be dealt with on the design side, as well. What is fundamentally changing is that margin, which has long been used as a buffer for variation and other manufacturing process-related problems, no longer works in these leading-edge designs for a couple of reasons. First, margin im... » read more

Back-End-of-Line (BEOL) Metallization


Physical Vapor Deposition (PVD) for Back-End-of-Line (BEOL) metallization is being pushed to the limits at the 16-nanometer (nm) technology node and beyond. Extending PVD for metal liner and barrier seed deposition is forcing the process into a narrow window that must be characterized prior to manufacturing introduction. Furthermore, understanding the liner dependency on the trench and via etch... » read more