Chip Industry Week In Review


McKinsey issued a new report on the state of the chemical supply chain for semiconductors in the U.S., citing potential shortages of high-purity materials such as tungsten, aluminum and copper, lack of access to CMP slurries and photoresists for EUV, and rising competition for high-k precursors that can fetch higher prices outside of the U.S. CSIS weighed in on the U.S. goverment's recent ... » read more

Research Bits: Mar. 25


2D materials in 3D transistors Researchers at the University of California Santa Barbara investigated 3D gate-all-around (GAA) transistors made using 2D semiconductors. They considered three different approaches to channel stacking: nano-sheet FETs, nano-fork FETs, and nano-plate FETs. The nano-plate FET architecture, which exploits lateral stacking of 2D layers, was found to maximize the g... » read more

Research Bits: Sept. 24


Modeling negative capacitance Researchers from Lawrence Berkeley National Laboratory developed an open-source 3D simulation framework capable of modeling the atomistic origins of negative capacitance in ferroelectric thin films at the device level. When a material has negative capacitance, it can store a greater amount of electrical charge at lower voltages. The team believes the FerroX fra... » read more

Chip Industry Week In Review


Concerns mount on the use of American-manufactured semiconductors in Russian weapons, with Analog Devices, AMD, Intel and TI set to testify next week before the U.S. Senate Permanent Subcommittee on Investigations. Also, U.S. and other government agencies issued a joint advisory and more details about ongoing Russian military cyberattacks, espionage, and sabotage. The U.S. Commerce Departmen... » read more

Research Bits: Aug. 27


Ammonia-free GaN Researchers from Nagoya University discovered a way to grow gallium nitride (GaN) semiconductors without using ammonia. The process is both more environmentally friendly and allows for high-quality growth of crystals at a lower cost. Metal organic chemical vapor deposition (MOCVD) is the most common technique for GaN production, which uses ammonia (NH3) gas as the source of... » read more

Research Bits: Aug. 5


Measuring temperature with neutrons Researchers from Osaka University, National Institutes for Quantum Science and Technology, Hokkaido University, Japan Atomic Energy Agency, and Tokamak Energy developed a way to rapidly measure the temperature of electronic components inside a device using neutrons. The technique, called ‘neutron resonance absorption’ (NRA), examines neutrons being ab... » read more

Chip Industry Technical Paper Roundup: May 21


New technical papers added to Semiconductor Engineering’s library this week. [table id=227 /] More ReadingTechnical Paper Library home » read more

Tweaking Isotopes In Thin Semiconductor Materials Can Influence Optical And Electronic Properties 


A technical paper titled “Anomalous isotope effect on the optical bandgap in a monolayer transition metal dichalcogenide semiconductor” was published by researchers at Oak Ridge National Laboratory (ORNL) and University of Central Florida. Abstract: "Isotope effects have received increasing attention in materials science and engineering because altering isotopes directly affects phonons, ... » read more

Chip Industry Technical Paper Roundup: March 26


New technical papers recently added to Semiconductor Engineering’s library. [table id=209 /] Find last week's technical paper additions here. » read more

Training Large LLM Models With Billions To Trillion Parameters On ORNL’s Frontier Supercomputer


A technical paper titled “Optimizing Distributed Training on Frontier for Large Language Models” was published by researchers at Oak Ridge National Laboratory (ORNL) and Universite Paris-Saclay. Abstract: "Large language models (LLMs) have demonstrated remarkable success as foundational models, benefiting various downstream applications through fine-tuning. Recent studies on loss scaling ... » read more

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