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A Benchmark Study Of Complementary-Field Effect Transistor (CFET) Process Integration Options: Comparing Bulk vs. SOI vs. DSOI Starting Substrates


Sub-5 nm logic nodes will require an extremely high level of innovation to overcome the inherent real-estate limitations at this increased device density. One approach to increasing device density is to look at the vertical device dimension (z-direction), and stack devices on top of each other instead of conventionally side-by-side. The fabrication of a Complementary-Field Effect Transistor (CF... » read more

GDDR6 – HBM2 Tradeoffs


Steven Woo, Rambus fellow and distinguished inventor, talks about why designers choose one memory type over another. Applications for each were clearly delineated in the past, but the lines are starting to blur. Nevertheless, tradeoffs remain around complexity, cost, performance, and power efficiency.   Related Video Latency Under Load: HBM2 vs. GDDR6 Why data traffic and bandw... » read more

Planarization Challenges At 7nm And Beyond


Dan Sullivan, executive director of semiconductor technology at Brewer Science, digs into the challenges of planarizing a thin film on a wafer for etch and optical control. The problem becomes more difficult at advanced nodes because the films are thinner. https://youtu.be/iNA6EGpoYZU     _________________________________ See more tech talk videos here   » read more