tag: Tsinghua University

Research Bits: Sept. 20
By Jesse Allen - 20 Sep, 2022 - Comments: 0

Multi-mode memristors Researchers from ETH Zurich, the University of Zurich, and Empa built a new memristor that can operate in multiple modes and could potentially be used to mimic neurons in more applications. “There are different operation modes for memristors, and it is advantageous to be able to use all these modes depending on an artificial neural network’s architecture,” said R... » read more

Technical Paper Round-Up: Aug 23
By Linda Christensen - 23 Aug, 2022 - Comments: 0

New technical papers added to Semiconductor Engineering’s library this week. [table id=46 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit for... » read more

Efficient Neuromorphic AI Chip: “NeuroRRAM”
By Technical Paper Link - 17 Aug, 2022 - Comments: 0

New technical paper titled "A compute-in-memory chip based on resistive random-access memory" was published by a team of international researchers at Stanford, UCSD, University of Pittsburgh, University of Notre Dame and Tsinghua University. The paper's abstract states "by co-optimizing across all hierarchies of the design from algorithms and architecture to circuits and devices, we present ... » read more

Technical Paper Round-up: May 17
By Linda Christensen - 17 May, 2022 - Comments: 0

New technical papers added to Semiconductor Engineering’s library this week. [table id=27 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a go... » read more

Miniaturized Liquid Metal-based Flexible Electrochemical Detection System on Fabric
By Technical Paper Link - 09 May, 2022 - Comments: 0

Researchers from Beihang University (Beijing), Zhejiang University, and Tsinghua University. Abstract "Integrated electrochemical sensing platforms in wearable devices have great prospects in biomedical applications. However, traditional electrochemical platforms are generally fabricated on airtight printed circuit boards, which lack sufficient flexibility, air permeability, and conformab... » read more

Technical Paper Round-Up: March 29
By Linda Christensen - 29 Mar, 2022 - Comments: 0

Improving batteries, ultra low-power photonic edge computing, SLAM, Tellurium for 2D semiconductors, and reservoir computing top the past week's technical papers. The focus on energy is critical as the edge buildout continues and more devices are connected to a battery, while research into new architectures and materials that will continue scaling and improve performance per watt continue at th... » read more

Rotating neurons for all-analog implementation of cyclic reservoir computing
By Technical Paper Link - 23 Mar, 2022 - Comments: 0

Abstract "Hardware implementation in resource-efficient reservoir computing is of great interest for neuromorphic engineering. Recently, various devices have been explored to implement hardware-based reservoirs. However, most studies were mainly focused on the reservoir layer, whereas an end-to-end reservoir architecture has yet to be developed. Here, we propose a versatile method for implemen... » read more

Technical Paper Round-Up: March 22
By Linda Christensen - 22 Mar, 2022 - Comments: 0

New memories, materials, and transistor types, and processes for making those devices, highlighted the past week's technical papers. That includes everything from vertical MoS2 to programmable black phosphorus image sensors and photonic lift-off processes for flexible thin-film materials. Papers continue to flow from all parts of the supply chain, with some new studies out of Pakistan, Seoul... » read more

Vertical MoS2 transistors with sub-1-nm gate lengths
By Technical Paper Link - 15 Mar, 2022 - Comments: 0

Abstract "Ultra-scaled transistors are of interest in the development of next-generation electronic devices. Although atomically thin molybdenum disulfide (MoS2) transistors have been reported, the fabrication of devices with gate lengths below 1 nm has been challenging. Here we demonstrate side-wall MoS2 transistors with an atomically thin channel and a physical gate length of sub-1 nm ... » read more

Power/Performance Bits: Oct. 19
By Jesse Allen - 19 Oct, 2021 - Comments: 0

Post-quantum crypto chip Researchers at the Technical University of Munich (TUM) designed and had fabricated an ASIC to run new encryption algorithms that can stand up to quantum computing. “Ours is the first chip for post-quantum cryptography to be based entirely on a hardware/software co-design approach,” said Georg Sigl, Professor of Security in Information Technology at TUM. “As a... » read more

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