A new technical paper titled “Molecular Layer Deposited Aluminum-Based Hybrid Resist for High-Resolution Nanolithography and Direct Ultra-High Aspect Ratio Pattern Transfer” was published by researchers at Stony Brook University, the University of Texas at Dallas, and Brookhaven National Laboratory.
Excerpt
“Here, this study reports the systematic lithographic patterning characterization of an Al-based hybrid resist synthesized via vapor-phase molecular layer deposition (MLD), using the trimethylaluminum (TMA) metal precursor and the hydroquinone (HQ) aromatic organic linker. “
Find the technical paper here. November 2025.
Lee, Won‐Il, Dan N. Le, Matthew Yen, Melinda Lin, Ashwanth Subramanian, Xiao Tong, Nikhil Tiwale, Jiyoung Kim, and Chang‐Yong Nam. “Molecular Layer Deposited Aluminum‐Based Hybrid Resist for High‐Resolution Nanolithography and Direct Ultra‐High Aspect Ratio Pattern Transfer.” Advanced Materials Technologies (2025): e01639. Creative commons license.
Leave a Reply