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Imaging Of Overlay And Alignment Markers Under Opaque Layers Using Picosecond Laser Acoustic Measurements


Optically opaque materials present a series of challenges for alignment and overlay in the semi-damascene process flow or after the processing of the magnetic tunnel junction (MTJ) of a Magnetic Random-Access Memory (MRAM). The overlay and alignment of a lithographically defined pattern on top of the pattern and the underlying layer is fundamental to device operation in all multi-layer patterne... » read more

Growing Challenges With Wafer Bump Inspection


As advanced packaging goes mainstream, ensuring that wafer bumps are consistent has emerged as a critical concern for foundries and OSATs. John Hoffman, computer vision engineering manager at CyberOptics, talks about the shift toward middle-of-line and how that is affecting inspection and metrology, why there is so much concern over co-planarity and alignment, how variation can add up and creat... » read more

Overlay Control for Nanoimprint Lithography


Abstract:  Nanoimprint lithography (NIL) is a promising technique for fine-patterning with a lower cost than other lithography techniques such as EUV or immersion with multi-patterning. NIL has the potential of "single" patterning for both line patterns and hole patterns with a half-pitch of less than 20nm. NIL tools for semiconductor manufacturing employ die- by-die alignment syste... » read more

Overlay Control for Nanoimprint Lithography


Abstract: Nanoimprint lithography (NIL) is a promising technique for fine-patterning with a lower cost than other lithography techniques such as EUV or immersion with multi-patterning. NIL has the potential of "single" patterning for both line patterns and hole patterns with a half-pitch of less than 20nm. NIL tools for semiconductor manufacturing employ die- by-die alignment system ... » read more

Big Changes In Patterning


Aki Fujimura, CEO of [getentity id="22864" comment="D2S"], sat down with Semiconductor Engineering to discuss patterning issues at 10nm and below, including mask alignment, the need for GPU acceleration, EUV's future impact on the total number of masks, and what the re-introduction of curvilinear shapes will mean for design. SE: Patterning issues are getting a lot of attention at 10nm and 7n... » read more