tag: finFETs

Using A Virtual DOE To Predict Process Windows And Device Performance Of Advanced FinFET Technology
By Qingpeng Wang - 03 Aug, 2021 - Comments: 0

By Qingpeng Wang, Yu De Chen, Cheng Li, Rui Bao, Jacky Huang, and Joseph Ervin Introduction With continuing finFET device process scaling, micro loading control becomes increasingly important due to its significant impact on yield and device performance [1-2]. Micro-loading occurs when the local etch rate on a wafer is dependent upon existing feature sizes and local pattern density. Uninten... » read more

Designing Chips In A ‘Lawless’ Industry
By Ed Sperling - 02 Aug, 2021 - Comments: 2

The guideposts for designing chips are disappearing or becoming less relevant. While engineers today have many more options for customizing a design, they have little direction about what works best for specific applications or what the return on investment will be for those efforts. For chip architects, this is proving to be an embarrassment of riches. However, that design freedom comes wit... » read more

Lower Power Chips: What To Watch Out For
By Ann Mutschler - 08 Jul, 2021 - Comments: 0

Low-power design in advanced nodes and advanced packaging is becoming a multi-faceted, multi-disciplinary challenge, where a long list of issues need to be solved both individually and in the context of other issues. With each new leading-edge process node, and with increasingly dense packaging, the potential for problematic interactions is growing. That, in turn, can lead to poor yield, cos... » read more

Thinner Channels With 2D Semiconductors
By Katherine Derbyshire - 21 Jun, 2021 - Comments: 0

Moving to future nodes will require more than just smaller features. At 3/2nm and beyond, new materials are likely to be added, but which ones and exactly when will depend upon an explosion of material science research underway at universities and companies around the globe. With field-effect transistors, a voltage applied to the gate creates an electric field in the channel, bending the ban... » read more

Power Optimization: What’s Next?
By Brian Bailey - 17 May, 2021 - Comments: 2

Concerns about the power consumed by semiconductors has been on the rise for the past couple of decades, but what can we expect to see coming in terms of analysis and automation from EDA companies, and is the industry ready to make the investment? Ever since Dennard scaling stopped providing automatic power gains by going to a smaller geometry, circa 2006, semiconductors have been increasing... » read more

The Future Of FinFETs At 5nm And Beyond
By Assawer Soussou - 05 Mar, 2021 - Comments: 0

While contact gate pitch (GP) and fin pitch (FP) scaling continues to provide higher performance and lower power to finFET platforms, controlling RC parasitics and achieving higher transistor performance at technology nodes of 5nm and beyond becomes challenging. In collaboration with Imec, we recently used SEMulator3D virtual fabrication to explore an end-to-end solution to better underst... » read more

Breaking The 2nm Barrier
By Mark LaPedus - 18 Feb, 2021 - Comments: 4

Chipmakers continue to make advancements with transistor technologies at the latest process nodes, but the interconnects within these structures are struggling to keep pace. The chip industry is working on several technologies to solve the interconnect bottleneck, but many of those solutions are still in R&D and may not appear for some time — possibly not until 2nm, which is expected t... » read more

Evaluation Of The Impact Of Source Drain epi Implementation On Logic Performance Using Combined Process And Circuit Simulation
By Coventor - 17 Feb, 2021 - Comments: 0

In this paper, we explore an end-to-end solution using SEMulator3D to address the need to include process variation effects in circuit simulation. For the first time, we couple SEMulator3D with BSIM compact modeling to evaluate process variation impacts on circuit performance. The process integration goal of the study was to optimize contacts and spacer thickness of advanced-node FinFETs in ter... » read more

Design For Reliability
By Brian Bailey - 15 Feb, 2021 - Comments: 1

Circuit aging is emerging as a mandatory design concern across a swath of end markets, particularly in markets where advanced-node chips are expected to last for more than a few years. Some chipmakers view this as a competitive opportunity, but others are unsure we fully understand how those devices will age. Aging is the latest in a long list of issues being pushed further left in the desig... » read more

New Transistor Structures At 3nm/2nm
By Mark LaPedus - 25 Jan, 2021 - Comments: 12

Several foundries continue to develop new processes based on next-generation gate-all-around transistors, including more advanced high-mobility versions, but bringing these technologies into production is going to be difficult and expensive. Intel, Samsung, TSMC and others are laying the groundwork for the transition from today’s finFET transistors to new gate-all-around field-effect trans... » read more

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