tag: Korea University

3D NAND: Scenarios For Scaling & Stacking
By Technical Paper Link - 25 Aug, 2022 - Comments: 0

A new research paper titled "Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages" was published by researchers at Sungkyunkwan University and Korea University. Abstract "Over the past few decades, NAND flash memory has advanced with exponentially-increasing bit growth. As bit cells in 3D NAND flash memory are stacked up and scaled down together, some pote... » read more

Fully CMOS-compatible Ternary Inverter with a Memory Function Using Silicon Feedback Field-Effect Transistors (FBFETs)
By Technical Paper Link - 02 Aug, 2022 - Comments: 0

New technical paper titled "New ternary inverter with memory function using silicon feedback field-effect transistors" was published from researchers at Korea University. Abstract: In this study, we present a fully complementary metal–oxide–semiconductor-compatible ternary inverter with a memory function using silicon feedback field-effect transistors (FBFETs). FBFETs operate with a pos... » read more

Technical Paper Round-Up: June 8
By Linda Christensen - 08 Jun, 2022 - Comments: 0

  New technical papers added to Semiconductor Engineering’s library this week. [table id=32 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a ... » read more

Addressing Vehicle Security Vulnerabilities With Structure-Aware CAN Fuzzing System
By Technical Paper Link - 03 Jun, 2022 - Comments: 0

New technical paper titled "Efficient ECU Analysis Technology Through Structure-Aware CAN Fuzzing" from researchers at Soongsil University, Korea University, and Hansung University with funding from the Korean government. Abstract "Modern vehicles are equipped with a number of electronic control units (ECUs), which control vehicles efficiently by communicating with each other through the co... » read more

Technical Paper Round-Up: March 22
By Linda Christensen - 22 Mar, 2022 - Comments: 0

New memories, materials, and transistor types, and processes for making those devices, highlighted the past week's technical papers. That includes everything from vertical MoS2 to programmable black phosphorus image sensors and photonic lift-off processes for flexible thin-film materials. Papers continue to flow from all parts of the supply chain, with some new studies out of Pakistan, Seoul... » read more

NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistors
By Technical Paper Link - 15 Mar, 2022 - Comments: 0

Abstract: "The processing of large amounts of data requires a high energy efficiency and fast processing time for high-performance computing systems. However, conventional von Neumann computing systems have performance limitations because of bottlenecks in data movement between separated processing and memory hierarchy, which causes latency and high power consumption. To overcome this hindra... » read more

SOT-MRAM To Challenge SRAM
By Bryon Moyer - 13 Jan, 2022 - Comments: 1

In an era of new non-volatile memory (NVM) technologies, yet another variation is poised to join the competition — a new version of MRAM called spin-orbit torque, or SOT-MRAM. What makes this one particularly interesting is the possibility that someday it could supplant SRAM arrays in systems-on-chip (SoCs) and other integrated circuits. The key advantages of SOT-MRAM technology are the pr... » read more

Power/Performance Bits: Jan. 10
By Jesse Allen - 10 Jan, 2022 - Comments: 0

Muscle-tracking clothing Researchers from the University of Utah and Gyeongsang National University developed a low-cost bioelectrical sensor that can be integrated into clothing. The sensor measures electromyography (EMG) signals that are generated in muscles when they contract. EMG signals are useful for studying muscle fatigue and recovery and could potentially be used to inform diagnosi... » read more

Spin–orbit torque engineering in β-W/CoFeB heterostructures with W–Ta or W–V alloy layers between β-W and CoFeB
By Technical Paper Link - 04 Jan, 2022 - Comments: 0

Abstract "The spin–orbit torque (SOT) resulting from a spin current generated in a nonmagnetic transition metal layer offers a promising magnetization switching mechanism for spintronic devices. To fully exploit this mechanism, in practice, materials with high SOT efficiencies are indispensable. Moreover, new materials need to be compatible with semiconductor processing. This study introduce... » read more

Power/Performance Bits: June 22
By Jesse Allen - 22 Jun, 2021 - Comments: 0

Terahertz silicon multiplexer Researchers from Osaka University and University of Adelaide designed a silicon multiplexer for terahertz-range communications in the 300-GHz band. “In order to control the great spectral bandwidth of terahertz waves, a multiplexer, which is used to split and join signals, is critical for dividing the information into manageable chunks that can be more easily... » read more

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