tag: lithography

Multi-Beam Begins To Shine
By Mark LaPedus - 17 Oct, 2013 - Comments: 0

After years of R&D and promises, multi-beam electron-beam technology is delayed and late to the market. The technology requires more funding and work than previously thought. And generally, the skepticism is running high for the technology. Finally, however, there is a ray of hope, and some momentum, in multi-beam—at least on the photomask front. Seeking to accelerate its multi-beam te... » read more

Debate Heats Up Over Bigger Glass
By Mark LaPedus - 17 Oct, 2013 - Comments: 0

For more than two decades, photomask makers have been talking about moving to a new and larger mask size, sometimes called “bigger glass” by the industry. Generally, the discussions about “bigger glass” have been all talk and no action. But now, some chipmakers are turning up the volume in the discussions and are pushing for a larger mask size. A larger mask size would require the ph... » read more

Executive Briefing: Getting Direct On Litho
By Mark LaPedus - 17 Oct, 2013 - Comments: 0

Semiconductor Engineering sat down and talked with David Lam, principal of the David Lam Group, an investment and advisory firm. Lam is also the chairman of Multibeam, a multi-beam equipment startup for direct-write lithography and other applications. He founded Lam Research in 1980 and left as an employee in 1985. He served on Lam Research’s board for five years after that. SE: Multibeam ... » read more

Challenges Mount For EUV Masks
By Mark LaPedus - 17 Oct, 2013 - Comments: 0

ASML Holding’s first production-worthy scanners for extreme ultraviolet (EUV) lithography are expected to ship this year, but there are still a number of challenges to bring the technology into high-volume manufacturing. As before, the three main challenges for EUV are the power sources, resists and photomasks. To date, the resists are making progress, while the EUV power sources remain a ... » read more

The Brave New World Of FinFETs
By Ed Sperling - 10 Oct, 2013 - Comments: 0

SoCs using 16nm and 14nm finFETs are expected to begin rolling out next year using a 20nm back-end-of-line process. While the initial performance and power numbers are looking very promising, the challenges of designing and building these complex chips are daunting—and there are more problems on the way. First, the good news. Initial results from foundries show a 150% improvement in perfor... » read more

Risk Vs. Reward
By Ed Sperling - 19 Sep, 2013 - Comments: 0

One of the most persistent business myths is that deep pockets in challenging times always win in the end. While that has proven a successful model in many industries where the barrier to entry is enormous and rising, in the technology world the outcome isn’t always what you’d expect even with those same variables. In fact, the history of technology is littered with former business giant... » read more

Litho Roadmap Remains Cloudy
By Mark LaPedus - 19 Sep, 2013 - Comments: 0

By Mark LaPedus For some time, the lithography roadmap has been cloudy. Optical lithography has extended much further than expected. And delays with the various next-generation lithography (NGL) technologies have forced the industry to re-write the roadmap on multiple occasions. Today, there is more uncertainty than ever in lithography. Until recently, for example, leading-edge logic chipma... » read more

Mask Data Prep Issues Compounding At 20nm
By Ann Mutschler - 19 Sep, 2013 - Comments: 0

By Ann Steffora Mutschler When it comes to mask data prep—the step in the design and manufacturing flow that occurs just after optical proximity correction (OPC)—challenges have continued to rise with the subsequent moves to smaller geometries. This is driven by the scaling demands of delivering about a 50% area shrink from node to node on a two-year cycle, and thus dictates the lithog... » read more

The Impact Of 14-nm Photomask Uncertainties on Computational Lithography Solutions
By Various Writers - 19 Sep, 2013 - Comments: 0

Computational lithography solutions rely upon accurate process models to faithfully represent the imaging system output for a defined set of process and design inputs. These models, in turn, rely upon the accurate representation of multiple parameters associated with the scanner and the photomask. While certain system input variables, such as scanner numerical aperture, can be empirically tuned... » read more

Manufacturing Bits: Sept. 3
By Mark LaPedus - 03 Sep, 2013 - Comments: 0

Dancing With The Stars In telescopes, the ability to see distant stars and galaxies is driven by the light-gathering area and detectors in the system. In the last 50 years, the collecting area in large-scale telescopes has increased by only a factor of four, according to researchers from the University of California at Santa Barbara. Meanwhile, the sensitivity of CCD detectors has increased... » read more

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