Finding Defects Is Getting Harder


Chipmakers are plotting out a strategy to scale the transistor to 10nm and beyond. Migrating to these nodes presents a number of challenges, but one issue is starting to gain more attention in the market—killer defects. Defects have always been problematic in the yield ramp for chip designs, but the ability to find them is becoming more difficult and expensive at each node. And it will be... » read more

Complementary E Beam Lithography


Multibeam Chairman David Lam looks at complementary E-Beam lithography (CEBL) and the impact of 1D design and pitch division. [youtube vid=nyvplBl4HA4] » read more

Speeding Up E-beam Inspection


Wafer inspection, the science of finding killer defects in chips, is reaching a critical juncture. Optical inspection, the workhorse technology in the fab, is being stretched to the limit at advanced nodes. And e-beam inspection can find tiny defects, but it remains slow in terms of throughput. So to fill the gap, the industry has been working on a new class of multiple beam e-beam inspectio... » read more

The Week In Review: Manufacturing


Christopher Rolland, an analyst at FBR, made a startling statement in a recent report. “At the pace of consolidation set thus far this year, 32% of all U.S. publicly traded semiconductor companies would be acquired in 2015! While this run-rate is not likely sustainable and should slow as the year progresses, we still expect ~15% consolidation rates for the remainder of this cycle (above low-t... » read more

Next EUV Challenge: Mask Inspection


Extreme ultraviolet ([gettech id="31045" comment="EUV"]) lithography is still not ready for prime time, but the technology finally is moving in the right direction. The EUV light source, for example, is making progress after years of delays and setbacks. Now, amid a possible breakthrough in EUV, the industry is revisiting a nagging issue and asking a simple question: How do you inspect EUV p... » read more

Manufacturing Bits: March 24


Mouse brains to multi-beam At the recent SPIE Advanced Lithography conference, Sematech provided an update on its multi-beam, e-beam inspection program. The goal is to develop a next-generation inspection tool, which could be faster than traditional e-beam inspection and could one day displace brightfield inspection. “Optical inspection is having trouble detecting particles that are small... » read more

Maglen: Multi-Beam E-Beam Inspection


Wafer inspection, the science of finding defects on a wafer, is becoming more challenging and costly at each node. In fact, the ability to detect sub-30nm defects is challenging with today’s inspection tools, which are primarily based on two separate technologies—optical and e-beam. In the inspection flow, chipmakers first use e-beam inspection, mainly for engineering analysis. E-beam is... » read more

2014 eBeam Survey Results


An industry-wide poll highlights what the industry is thinking about EUV and mask writing at advanced nodes. To view the poll, click here. » read more

Wanted: Multi-beam E-Beam Inspection


The IC industry is making a giant leap from planar devices to a range of next-generation architectures, such as 3D NAND and finFETs. But it’s taking longer than expected to ramp up these new technologies in the market. And the challenges are expected to mount for the next round of chips. It’s difficult to pinpoint the exact issues with 3D NAND and finFETs. On the manufacturing front alo... » read more

What Happened To Next-Gen Lithography?


Chipmakers continue to march down the process technology curve. Using today’s optical lithography and multiple patterning, the semiconductor industry is scaling its leading-edge devices far beyond what was once considered possible. The question is how far can the industry extend 193nm immersion [getkc id="80" comment="lithography"] and multiple patterning before these technologies become t... » read more

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