Memristors: Authentication for edge devices; ultra-high temperature operation; DNA plus perovskites.
Researchers from the University of Hong Kong, Tsinghua University, and the Southern University of Science and Technology designed a privacy-preserving system for edge devices that combines physically unclonable functions and compute-in-memory.
The Co-Located Authentication and Processing (CLAP) system integrates authentication and processing functions within a unified memristor-based platform that leverages the device’s inherent physical randomness to provide a unique security identifier for device authentication. At the same time, the memristor’s compute-in-memory capability enables efficient data analysis.
“We exploit both characteristics simultaneously. Current solutions separate security from analysis modules and memory from computation units, creating significant hardware and energy overheads—prohibitive for resource-limited edge applications. Our hardware-level integration maintains authentication reliability and computational accuracy without traditional inefficiencies,” said Zhengwu Liu, a research assistant professor from the Department of Electrical and Computer Engineering at HKU, in a statement.
A proof-of-concept demonstrated secure electrocardiogram (ECG) data collection, achieving device authentication with an area under the curve of 99.46%, along with efficient signal compression and area reduction compared to conventional implementations. [1]
Researchers from the University of Southern California, Airforce Research Lab, Kumamoto University, and TetraMem built a high-temperature memristor that kept working reliably at 700 degrees Celsius, with the possibility of reaching even higher temperatures.
The memristor was constructed of tungsten for the top layer, hafnium oxide ceramic in the middle, and graphene on the bottom. The device survived more than one billion switching cycles and held data for over 50 hours at 700 degrees. It also ran on 1.5 volts with an operation speed of tens of nanoseconds.
In addition to extremely high temperature environments and space exploration, the team says the memristor is ideal for efficient matrix multiplication in AI systems. [2]
Researchers from Penn State and the University of Cincinnati combined synthetic DNA with crystalline perovskite to create a memristor storage device that consumes much less power while having a higher storage capacity than traditional flash drives.
“Biology and electronics are different domains,” said Kavya S. Keremane, co-corresponding author and postdoctoral researcher in materials science and engineering at Penn State, in a press release. “Bridging these two fields required developing an entirely new materials platform that allows them to function seamlessly together. By combining the information storage capabilities of DNA with the exceptional electronic properties of perovskite semiconductors, we created a bio-hybrid system that fundamentally changes how low-power memory devices can be designed.”
The device uses customized DNA sequences to provide structural order, tunable electrical conductivity, and functional control. “We can computationally determine exactly which sequences we need and how long they should be, and then we can rationally design them with synthetic DNA,” said Neela H. Yennawar, research professor and director of the Penn State Huck Institutes of the Life Sciences’ Biomolecular Interactions Core Facility, in a statement. “These structures can be systematically doped with silver and other ions and engineered to interface seamlessly with perovskites — transforming DNA from a biological macromolecule into a programmable, multifunctional nanomaterials platform.”
Electrons reliably moved through the device when less than 0.1 volt was applied, and responded when the current was switched. The device consistently performed up to almost 250 degrees Fahrenheit and at room temperature for more than six weeks. [3]
[1] Z. Liu, Z. Wang, C. Ding, et al. Privacy-preserving data analysis using a memristor chip with colocated authentication and processing. Sci. Adv. 12, eady5485 (2026). https://doi.org/10.1126/sciadv.ady5485
[2] J. Zhao, C. S. Jorgensen, K. Mahalingam, et al. High-temperature memristors enabled by interfacial engineering. Science 0, eaeb9934 https://doi.org/10.1126/science.aeb9934
[3] K. S. Keremane, A. Gorthy, L. Zheng, et al. “Molecularly Engineered Highly Stable Memristors with Ultra-Low Operational Voltage: Integrating Synthetic DNA with Quasi-2D Perovskites.” Advanced Functional Materials (2026): e30539. https://doi.org/10.1002/adfm.202530539
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