tag: 10nm

Executive Insight: Luc Van den hove
By Mark LaPedus - 20 Feb, 2014 - Comments: 1

Semiconductor Engineering sat down to discuss current and future process technology challenges with Luc Van den hove, president and chief executive of Imec. What follows are excerpts of that conversation. SE: The industry is simultaneously working on several new and expensive technologies. This includes extreme ultraviolet (EUV) lithography and the next-generation 450mm wafer size. The indu... » read more

What’s After CMOS?
By Mark LaPedus - 24 Jan, 2014 - Comments: 3

Chipmakers continue to scale the CMOS transistor to finer geometries, but the question is for how much longer. The current thinking is that the CMOS transistor could scale at least to the 3nm node in the 2021 timeframe. And then, CMOS could run out of gas, prompting the need for a new switch technology. So what’s after the CMOS-based transistor? Carbon nanotubes and graphene get the most a... » read more

Waiting For Next-Generation Lithography
By Mark LaPedus - 23 Jan, 2014 - Comments: 2

Nearly 30 years ago, optical lithography was supposed to hit the wall at the magical 1 micron barrier, prompting the need for a new patterning technology such as direct-write electron beam and X-ray lithography. At that time, however, the industry was able to push optical lithography for volume chip production at the 1-micron node and beyond. This, in turn, effectively killed direct-write e-... » read more

Different Economies Of Scale, And Lots Of Questions
By Ed Sperling - 12 Dec, 2013 - Comments: 0

Being able to shrink features and reach the next node is already an exclusive club. It will become more exclusive at 16/14nm, which is expected to hit volume production in 2015, and even more exclusive still at 10nm. In fact, it may begin to look like a semi-private affair. The argument being presented is that economies of scale will still exist for those companies with pockets deep enough ... » read more

Challenges Mount In Inspection And Metrology
By Mark LaPedus - 12 Dec, 2013 - Comments: 0

Chipmakers are moving full speed ahead toward smaller process nodes, thereby driving up the costs and complexities in chip manufacturing. The migrations also are putting enormous stress on nearly all points of the fab flow, including a critical but unsung part of the business—process control. Process control involves 20 or so different segments in the inspection and metrology arena. Genera... » read more

Leti Outlines FDSOI And Monolithic 3D IC Roadmaps
By Mark LaPedus - 14 Nov, 2013 - Comments: 0

Semiconductor Engineering discussed the future roadmaps for fully depleted silicon-on-insulator (FDSOI) technology and monolithic 3D chips with Maud Vinet, manager for the Innovative Devices Laboratory at CEA-Leti. SE: What are some of the technologies being developed at the Innovative Devices Laboratory? Vinet: The Innovative Devices Laboratory is involved with advanced CMOS. So basically... » read more

EDA Shows Continued Growth
By Ed Sperling - 16 Oct, 2013 - Comments: 0

EDA and IP revenue jumped 3.8% in Q2 to $1.65 billion, up from $1.59 billion in the same period in 2013, spurred by the need for new tools to design, create and verify SoCs using 16/14nm finFETs. Sequentially, the numbers reported by the EDA Consortium were down slightly from Q1, but the four-quarter moving average—considered a more reliable number because tools sales are long-term investm... » read more

The Brave New World Of FinFETs
By Ed Sperling - 10 Oct, 2013 - Comments: 0

SoCs using 16nm and 14nm finFETs are expected to begin rolling out next year using a 20nm back-end-of-line process. While the initial performance and power numbers are looking very promising, the challenges of designing and building these complex chips are daunting—and there are more problems on the way. First, the good news. Initial results from foundries show a 150% improvement in perfor... » read more

Reliability Challenges In 16nm FinFET Design
By Arvind Vel - 10 Oct, 2013 - Comments: 1

As the IC industry rapidly adopts the 16nm technology node, IC designers are faced with a new wave of reliability challenges. The 16nm node has introduced several changes in the way that the devices are fabricated and how the metal stack-up is built. On one hand designers gain speed, leakage and density improvements. On the other, reliability engineers need to address the narrowing electromigra... » read more

Why does EUV matter?
By Brian Bailey - 01 Oct, 2013 - Comments: 0

By Brian Bailey The end of Moore’s Law has been predicted for almost as long as the law has existed. It normally comes down to some great technological barrier that cannot be breached, only to find that a solution is just around the corner and the concerns fade until the next barrier is identified. At DAC this year (2013), there were many predictions about why Moore’s Law will end in th... » read more

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