tag: Applied Materials

Swimming In Data
By Ed Sperling - 21 Mar, 2013 - Comments: 0

By Ed Sperling So many warnings about data overload have been issued over the past decade that people generally have stopped paying attention to them. The numbers are so astronomical that increases tend to lose meaning. Nowhere is this more evident than in the semiconductor metrology world, where files are measured in gigabytes. And at each new process node, as the number of transistors a... » read more

Nanoscale Wiring
By Kathryn Ta - 21 Mar, 2013 - Comments: 0

By Kathryn Ta The TEM image (below) taken at Applied Materials’ Maydan Technology Center shows a series of 20nm-wide trenches in cross section. These tiny structures – about 1/5000th of the diameter of an average human hair – are similar to the interconnects used to wire the billions of transistors in next-generation microchips. You can see that each trench is partially filled with coppe... » read more

Getting Ready For High-Mobility FinFETs
By Mark LaPedus - 21 Feb, 2013 - Comments: 0

By Mark LaPedus The IC industry entered the finFET era in 2011, when Intel leapfrogged the competition and rolled out the newfangled transistor technology at the 22nm node. Intel hopes to ramp up its second-generation finFET devices at 14nm by year’s end, with plans to debut its 11nm technology by 2015. Hoping to close the gap with Intel, silicon foundries are accelerating their efforts t... » read more

Foundry Arms Race Under Way
By Mark LaPedus - 21 Feb, 2013 - Comments: 0

By Mark LaPedus A year ago, chipmakers were reeling from a severe shortage of 28nm foundry capacity, prompting foundries to ramp up their fabs at a staggering pace. At the time, foundries were unable to keep up with huge and unforeseen demand for mobile chips. The shortfall was also caused by low yields and the overall lack of installed 28nm capacity. Today, the 28nm crunch is largely ov... » read more

Optical Lithography, Take Two
By Mark LaPedus - 21 Feb, 2013 - Comments: 0

By Mark LaPedus It’s the worst-kept secret in the industry. Extreme ultraviolet (EUV) lithography has missed the initial stages of the 10nm logic and 1xnm NAND flash nodes. Chipmakers hope to insert EUV by the latter stages of 10nm or by 7nm, but vendors are not counting on EUV in the near term and are preparing their back-up plans. Barring a breakthrough with EUV or other technology, IC ... » read more

What Will Replace Dual Damascene?
By Mark LaPedus - 24 Jan, 2013 - Comments: 0

By Mark LaPedus In the mid-1990s, IBM announced the world’s first devices using a copper dual damascene process. At the time, the dual damascene manufacturing process was hailed as a major breakthrough. The new copper process enabled IC makers to scale the tiny interconnects in a device, as the previous material, aluminum, faced some major limitations. Dual damascene remains the workhorse... » read more

Stacked Die From A Networking Angle
By Mark LaPedus - 24 Jan, 2013 - Comments: 1

By Mark LaPedus The first wave of 2.5D chips using silicon interposers are trickling out in the marketplace.FPGA vendor Xilinx was the first chipmaker to ship a 2.5D device, and Altera, Cisco, Huawei and IBM recently have talked about their respective 2.5D chip developments. Generally, Altera and Xilinx have taken a somewhat identical and straightforward approach. The two companies are sepa... » read more

Straight Talk On 3D TSVs
By Ed Sperling - 13 Dec, 2012 - Comments: 0

By Mark LaPedus Semiconductor Manufacturing & Design sat down to discuss 3D device challenges and applications with John Lau, a fellow at the Industrial Technology Research Institute (ITRI), a research organization in Taiwan. SMD: What is ITRI doing in 3D TSVs? Lau: At ITRI we have developed the world’s first Applied Materials’ 300mm (3D TSV) integration line. The line was comple... » read more

Interconnect Troubles
By Applied Materials Writers - 13 Dec, 2012 - Comments: 0

By Mehul Naik These days, transistor scaling is driving some of the most exciting innovations in device architecture and getting lots of attention as a result. What may be less obvious is the cascading effect transistor scaling is having on the interconnect. The biggest challenges result directly from pitch reduction required to support the increasing functionality. These include poor pattern ... » read more

Interconnect Performance In The Spotlight
By Applied Materials Writers - 04 Dec, 2012 - Comments: 0

By Richard Lewington Are you going to be in the San Francisco area on December 11th? We're hosting a forum to explore the path that interconnect technology must take to keep pace with transistor scaling and the transition to new 3D architectures. Transistors get all the attention these days as the savior of Moore's Law. But there's no point making transistors faster if the wires between ... » read more

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