tag: finFETs

FinFET Metrology Challenges Grow
By Mark LaPedus - 17 May, 2018 - Comments: 1

Chipmakers face a multitude of challenges in the fab at 10nm/7nm and beyond, but one technology that is typically under the radar is becoming especially difficult—metrology. Metrology, the art of measuring and characterizing structures, is used to pinpoint problems in devices and processes. It helps to ensure yields in both the lab and fab. At 28nm and above, metrology is a straightforward... » read more

Chipmakers Look Beyond Scaling
By Ed Sperling - 17 May, 2018 - Comments: 1

Gary Patton, CTO of GlobalFoundries, sat down with Semiconductor Engineering to discuss the rollout of EUV, the rising cost of designing chips at the most advanced nodes, and the growing popularity of 22nm planar FD-SOI in a number of markets. What follows are excerpts of that conversation. SE: You've just begun deploying EUV. Are you experiencing any issues? Patton: It's a very complicat... » read more

Early Chip-Package-System Thermal Analysis
By Annapoorna Krishnaswamy - 10 May, 2018 - Comments: 0

Next-generation automotive, HPC and networking applications are pushing the requirements of thermal integrity and reliability, as they need to operate in extreme conditions for extended periods of time. FinFET designs have high dynamic power density, and power directly impacts the thermal signature of the chip. Thermal degradation typically occurs over an extended period of chip operation. ... » read more

More Nodes, New Problems
By Ann Mutschler - 26 Apr, 2018 - Comments: 0

The rollout of leading-edge process nodes is accelerating rather than slowing down, defying predictions that device scaling would begin to subside due to rising costs and the increased difficulty of developing chips at those nodes. Costs are indeed rising. So are the number of design rules, which reflect skyrocketing complexity stemming from multiple patterning, more devices on a chip, and m... » read more

New Patterning Options Emerging
By Mark LaPedus - 19 Apr, 2018 - Comments: 1

Several fab tool vendors are rolling out the next wave of self-aligned patterning technologies amid the shift toward new devices at 10/7nm and beyond. Applied Materials, Lam Research and TEL are developing self-aligned technologies based on a variety of new approaches. The latest approach involves self-aligned patterning techniques with multi-color material schemes, which are designed for us... » read more

Modeling Semiconductor Process Variation
By Coventor - 19 Apr, 2018 - Comments: 0

3D semiconductors, 3D NAND Flash, FinFETS and other advanced devices are bringing tremendous opportunities to the semiconductor industry. Unfortunately, these devices are also bringing new design, process and production problems. Process variability has been a major contributor to production delays as feature sizes have decreased and process complexity has increased. Virtual fabrication is a co... » read more

Looking At Test Differently
By Ed Sperling - 05 Mar, 2018 - Comments: 1

Wilhelm Radermacher, executive advisor at [getentity id="22816" e_name="Advantest"], sat down with Semiconductor Engineering to discuss how the impact of rapid market changes, advanced packaging approaches and increasing complexity on test strategies and equipment. What follows are excerpts of that conversation. SE: As we move into new markets where use models and stresses on devices are dif... » read more

Tech Talk: 5/3nm Parasitics
By Ed Sperling - 22 Feb, 2018 - Comments: 0

Ralph Iverson, principal R&D engineer at Synopsys, talks about parasitic extraction at 5/3nm and what to expect with new materials and gate structures such as gate-all-around FETs and vertical nanowire FETs. https://youtu.be/24C6byQBkuI » read more

Transistor Options Beyond 3nm
By Mark LaPedus - 15 Feb, 2018 - Comments: 18

Despite a slowdown in chip scaling amid soaring costs, the industry continues to search for a new transistor type 5 to 10 years out—particularly for the 2nm and 1nm nodes. Specifically, the industry is pinpointing and narrowing down the transistor options for the next major nodes after 3nm. Those two nodes, called 2.5nm and 1.5nm, are slated to appear in 2027 and 2030, respectively, accord... » read more

New Thermal Issues Emerge
By Ann Mutschler - 12 Feb, 2018 - Comments: 0

Thermal monitoring is becoming more critical as gate density continues to increase at each new node and as chips are developed for safety critical markets such as automotive. This may sound counterintuitive because the whole point of device scaling is to increase gate density. But at 10/7 and 7/5nm, static current leakage is becoming a bigger issue, raising questions about how long [getkc id... » read more

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