Industry Scorecard For 2014


At the end of last year, Semiconductor Engineering asked the industry about the developments they expected to see in 2014. If you care to refresh your memory, they were categorized under markets, semiconductors and development tools. Now it is time to look back and see how accurate those predictions were and where they fell short. Markets The obvious trend, at the beginning of the year, wa... » read more

IBM, Intel And TSMC Roll Out finFETs


At the IEEE International Electron Devices Meeting (IEDM) in San Franciso, IBM, Intel and Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) this week will separately present the latest details of their respective 16nm/14nm finFET technologies. As expected, Intel and TSMC will continue to use bulk CMOS. IBM will continue to go with rival silicon-on-insulator (SOI) technology. At IEDM, Intel ... » read more

What’s Next For DNA Chips?


The field of genomic personalized medicine is an emerging and promising area. Using lab systems called DNA sequencers, these units could provide vital information about an individual’s genetic makeup. In this area, several companies are developing next-generation DNA sequencers, built around CMOS-based semiconductor technology. But CMOS-based DNA sequencing chips, and the competing techno... » read more

Manufacturing Bits: Sept. 23


The annual IEEE International Electron Devices Meeting (IEDM) will take place in San Francisco from Dec. 15-17. As usual, there will be presentations on the latest technologies in a number of fields, such as semiconductors, bio‐sensors, energy harvesting, power devices, sensors, magnetics, spintronics, two-dimensional electronics, among others. Here’s just some of the papers that will be pr... » read more

Interconnect Challenges Grow


Qualcomm outlined the technology challenges facing mobile chip suppliers at a recent event. In no particular order, the challenges include the usual suspects—area scaling, power reduction, performance and cost. Another concern for Qualcomm is an often-overlooked part of the equation—the backend-of-the-line (BEOL). In chip production, the BEOL is where the interconnects are formed within ... » read more

The List Of Unknowns Grows After Silicon


As discussed earlier in this series, most proposed alternative channel schemes depend on germanium channels for pMOS transistors, and InGaAs channels for nMOS transistors. Of the two materials, InGaAs poses by far the more difficult integration challenges. Germanium has been present in advanced silicon CMOS fabs for several technology generations, having been introduced used in strained silicon... » read more

Manufacturing Bits: Feb. 4


Secrets of mass variation The General Conference on Weights and Measures will soon approve a plan to redefine the kilogram and other measurement units. The new definition for the kilogram will be based on the fixed numerical values of Planck’s constant (h). Supposedly, the new definition will solve the current problem. The kilogram is the only SI unit that is still described as an artif... » read more

Germanium wedge-FETs pry away misfit dislocations


Any approach to alternative channel integration must consider the lattice mismatch between silicon and other channel materials. Some schemes, such as IMEC’s selective epitaxy, view the lattice mismatch as an obstacle and look for ways to minimize its effects. This point of view certainly has merit: misfit dislocations do significantly degrade transistor performance. Still, back in 2011 Shu-Ha... » read more

Manufacturing Bits: Jan. 21


Redefining The Kilogram In 2011, the General Conference on Weights and Measures approved a plan to redefine the kilogram and other measurement units. The new definition for the kilogram will be based on the fixed numerical values of Planck’s constant (h), according to the National Institute of Standards and Technology (NIST), part of the U.S. Department of Commerce. NIST has taken steps t... » read more

What’s After Silicon?


As discussed in the first article in this series, germanium is one of the leading candidates to succeed silicon as the channel material for advanced transistors, and has been for several years. The fundamental challenges of germanium integration were detailed at length in 2007. Unfortunately, knowing what the issues are does not necessarily lead to a solution. When a MOSFET transistor turns ... » read more

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