How FinFET Device Performance Is Affected By Epitaxial Process Variations


By Shih-Hao (Jacky) Huang and Yu De Chen As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of transistor performance, such as fringing capacitance or source drain resistance. The total resistance in a device is comprised of two components: internal re... » read more

Using Machine Learning In Fabs


Amid the shift towards more complex chips at advanced nodes, many chipmakers are exploring or turning to advanced forms of machine learning to help solve some big challenges in IC production. A subset of artificial intelligence (AI), machine learning, uses advanced algorithms in systems to recognize patterns in data as well as to learn and make predictions about the information. In the fab, ... » read more

Effects Of A Random Process Variation On The Transfer Characteristics Of A Fundamental Photonic Integrated Circuit Component


Silicon photonics is rapidly emerging as a promising technology to enable higher bandwidth, lower energy, and lower latency communication and information processing, and other applications. In silicon photonics, existing CMOS manufacturing infrastructure and techniques are leveraged. However, a key challenge for silicon photonics is the lack of mature models that take into account known CMOS pr... » read more

Blog Review: Sept. 18


Cadence's Paul McLellan checks out MLPerf and the challenges involved in developing a benchmark to assess machine learning training and inference performance. Synopsys' Om Prakash Thakur and Nusrat Ali take a look at the different types of NVDIMM and how it can bridge the performance gap between memory and storage solutions in servers. Mentor's Matthew Ballance points to why adoption of P... » read more

Week In Review: Manufacturing, Test


Chipmakers and OEMs Delphi Technologies is in volume production with a 800 volt silicon carbide (SiC) inverter for next-generation electric and hybrid vehicles. The inverter extends electric vehicle (EV) ranges. It also halves the charging times compared with today's 400 volt systems. In a separate announcement, Delphi Technologies and Cree have announce a partnership to utilize SiC semicon... » read more

Week In Review: Manufacturing, Test


China's DRAM efforts Two memory vendors from China, Tsinghua Unigroup and ChangXin Memory Technology, have disclosed more details about their respective efforts to enter the DRAM arena. As reported, Tsinghua Unigroup wants to enter the DRAM business. Now, the China-based firm has secured land to build a new DRAM fab. The firm recently signed an agreement with the Chongqing government to e... » read more

Blog Review: Sept. 4


Synopsys' Taylor Armerding checks out Apple's newly expanded bug bounty program, with bounty payouts are increasing to compete with malicious actors, and why even with security-oriented development the practice of bug bounties will remain needed. Mentor's Colin Walls shares a few more embedded software tips, this time on external variables, delay loops in real time systems, and meaningful pa... » read more

Week In Review: Manufacturing, Test


Chipmakers GlobalFoundries has filed suits in the U.S. and Germany, alleging that semiconductor manufacturing technologies used by TSMC infringe upon 16 of GF's patents. The suits were filed in the U.S. International Trade Commission (ITC), the U.S. Federal District Courts in the Districts of Delaware and the Western District of Texas, and the Regional Courts of Dusseldorf and Mannheim in Germ... » read more

Advanced Patterning Techniques For 3D NAND Devices


By Yu De Chen and Jacky Huang Driven by Moore’s law, memory and logic semiconductor manufacturers pursue higher transistor density to improve product cost and performance [1]. In NAND Flash technologies, this has led to the market dominance of 3D structures instead of 2D planar devices. Device density can be linearly increased by increasing stack layer counts in a 3D NAND device [2]. At th... » read more

The Next New Memories


Several next-generation memory types are ramping up after years of R&D, but there are still more new memories in the research pipeline. Today, several next-generation memories, such as MRAM, phase-change memory (PCM) and ReRAM, are shipping to one degree or another. Some of the next new memories are extensions of these technologies. Others are based on entirely new technologies or involve ar... » read more

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