tag: Sungkyunkwan University

Applying a Floating Gate Field Effect Transistor To A Logic-in-Memory Application Circuit Design
By Technical Paper Link - 19 Sep, 2023 - Comments: 0

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National University of Transportation, Samsung Electronics, and Sungkyunkwan University. Abstract: "The high data throughput and high energy efficiency required recently are increasingly difficult to implement... » read more

Chip Industry’s Technical Paper Roundup: Mar. 21
By Linda Christensen - 21 Mar, 2023 - Comments: 0

New technical papers recently added to Semiconductor Engineering’s library: [table id=88 /] If you have research papers you are trying to promote, we will review them to see if they are a good fit for our global audience. At a minimum, papers need to be well researched and documented, relevant to the semiconductor ecosystem, and free of marketing bias. There is no cost involved for us ... » read more

Large-Scale Nanometer-Thick Graphite Film (NGF) As A EUV Pellicle
By Technical Paper Link - 18 Mar, 2023 - Comments: 0

A new technical paper titled "Graphite Pellicle: Physical Shield for Next-Generation EUV Lithography Technology" was published by researchers at University of Ottawa, Sungkyunkwan University, and Hanbat National University. Abstract "Extreme ultraviolet lithography (EUVL) is widely employed in the electronics, automotive, military, and AI computing areas for IC chip fabrication. A pellicl... » read more

Research Bits: March 6
By Jesse Allen - 06 Mar, 2023 - Comments: 0

2D TMDs on silicon Engineers at MIT, University of Texas at Dallas, Institute for Basic Science, Sungkyunkwan University, Washington University in St. Louis, University of California at Riverside, ISAC Research, and Yonsei University found a way to grow 2D materials on industry-standard silicon wafers while preserving their crystalline form. Using a new “nonepitaxial, single-crystalline g... » read more

Technical Paper Roundup: Sept 6
By Linda Christensen - 06 Sep, 2022 - Comments: 0

New technical papers added to Semiconductor Engineering’s library this week. [table id=49 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit f... » read more

Artificial Neural Network (ANN)-Based Model To Evaluate The Characteristics of A Nanosheet FET (NSFET)
By Technical Paper Link - 02 Sep, 2022 - Comments: 0

This new technical paper titled "Machine-Learning-Based Compact Modeling for Sub-3-nm-Node Emerging Transistors" was published by researchers at SungKyunKwan University, Korea. Abstract: "In this paper, we present an artificial neural network (ANN)-based compact model to evaluate the characteristics of a nanosheet field-effect transistor (NSFET), which has been highlighted as a next-generat... » read more

Technical Paper Roundup: Aug. 30
By Linda Christensen - 30 Aug, 2022 - Comments: 0

New technical papers added to Semiconductor Engineering’s library this week. [table id=47 /] Semiconductor Engineering is in the process of building this library of research papers. Please send suggestions (via comments section below) for what else you’d like us to incorporate. If you have research papers you are trying to promote, we will review them to see if they are a good fit for... » read more

3D NAND: Scenarios For Scaling & Stacking
By Technical Paper Link - 25 Aug, 2022 - Comments: 0

A new research paper titled "Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages" was published by researchers at Sungkyunkwan University and Korea University. Abstract "Over the past few decades, NAND flash memory has advanced with exponentially-increasing bit growth. As bit cells in 3D NAND flash memory are stacked up and scaled down together, some pote... » read more

Technical Paper Round-Up: April 19
By Linda Christensen - 19 Apr, 2022 - Comments: 0

New technical papers include selective etching, ISO 26262 test bench, hardware accelerators, RISC-V, lidar, EUV mask inspection, fault attacks, edge computing, gallium oxide, and machine learning for VLSI CAD-on-chip power grid design. Cutting-edge research is now a global effort. It extends from the U.S. Air Force, to schools such as MIT, and universities in Italy, Spain, Portugal, India, K... » read more

Selective etching of silicon nitride over silicon oxide using ClF3 /H2 remote plasma
By Technical Paper Link - 18 Apr, 2022 - Comments: 0

Researchers from Sungkyunkwan University, MIT and others present an option for selective etching. Abstract "Precise and selective removal of silicon nitride (SiNx) over silicon oxide (SiOy) in a oxide/nitride stack is crucial for a current three dimensional NOT-AND type flash memory fabrication process. In this study, fast and selective isotropic etching of SiNx over SiOy has been investiga... » read more

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