A new technical paper, “Integration of Low-Voltage Nanoscale MoS2 Memristors on CMOS Microchips” was published by RWTH Aachen and Forschungszentrum Jülich GmbH.
Abstract
“2D materials (2DMs) are gaining increased attention for applications such as advanced electronics and neuromorphic computing due to their excellent electrical properties. Among these 2DMs, molybdenum disulfide (MoS2) has shown promise as a resistive switching (RS) layer for memory, selectors, and neuromorphic systems. Electrochemical metallization (ECM) devices based on 2DMs offer ultra-low energy consumption, large ON/OFF ratios, and switching at sub-nanometer thicknesses. However, most demonstrations rely on isolated, micrometer-scale structures fabricated on SiO2/Si substrates. The integration of 2DM-based memristors onto silicon complementary metal-oxide-semiconductor (CMOS) platforms is rarely reported, particularly for MoS2. This work presents the first nanoscale ∼0.015 µm2 active area MoS2-based memristors integrated in the back-end-of-line of 350 nm-technology CMOS microchips. One-transistor-one-resistor (1T1R) cells exhibited forming-free, nonvolatile RS with ultra-low operating voltages (∼0.23 V for the SET and ∼−0.1 V for the RESET) and low cycle-to-cycle variability (6.7%). We provide the current-voltage (I–V) characteristics of 19 MoS2-based 1T1R cells, revealing high repeatability across multiple cycles and devices. Our work represents a significant step toward integrating MoS2-based nonvolatile memristive devices onto silicon CMOS microchips.”
Find the technical paper here. February 2026.
Integration of Low-Voltage Nanoscale MoS2 Memristors on CMOS Microchips
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin-Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme
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