Optimize Digital Payloads With Radiation Hardened GaN

As the demand for greater communication bandwidth continues to grow, next-generation satellites must deliver higher data throughput for digital payloads. This shift to digital payloads requires engineers to reassess key design parameters, such as material needs, operational factors, and radiation robustness, to ensure optimal performance in their space power systems. Infineon HiRel’s new radiation-hardened GaN transistor delivers best-in-class power and radiation performance in a new, light-weight and robust package. Download the technical article to learn more.

Gallium nitride (GaN) in space applications

For generations, silicon (Si) has been the industry’s material of choice in power applications, but gallium nitride (GaN) has shown real promise offering a multitude of advantages in applications where reaching high switching speeds and efficiency are crucial. Wide bandgap semiconductors, such as GaN, make strong power transistors, enabling minimal drain-source resistance (R_DS(ON)), improving breakdown voltage, and promoting performance as an enhancement-mode device. With these features, GaN supports the creation of smaller, more efficient power systems, making it ideal for space applications.

Infineon’s internally manufactured rad-hard GaN transistor is a first for space applications. The technology offers a unique combination of high switching speeds, efficiency, and radiation robustness, especially optimal for next-generation satellites. Furthermore, our Joint Army Navy Space (JANS) qualification sets us apart from other GaN HEMTs, ensuring our device’s reliability and performance in mission-critical operations.

Overcoming thermal challenges with advanced packaging

Fig. 1: HiRel PowIR-SMD package boasts a small 7.1 x 5.3 mm2 footprint.

One of the key challenges in space power designs is thermal management. Infineon’s advanced packaging solutions, including our new patented PowIR-SMD package, uniquely reduces parasitic inductance and supports greater conductivity in a small, light-weight design. The use of aluminum nitride (AlN) in the PowIR-SMD provides a highly effective way to dissipate heat and mitigate thermal cycling mechanical stress. AlN boasts additional benefits, such as reducing the accumulation of free charges from environmental radiation, mitigating system damage, and promoting inherent radiation robustness.

Conclusion

Infineon HiRel’s radiation-hardened GaN technology is revolutionizing space exploration by enabling the creation of smaller, more efficient power systems. At Infineon, we are committed to driving innovation and pushing the boundaries of what is possible. Download the technical article to learn more about the benefits of GaN in space applications and discover how Infineon’s radiation-hardened GaN solution is shaping the future of space exploration.