Researchers from imec, KU Leuven, Samsung Electronics, and Lam Research published a technical paper titled “Optimization of 3D-DRAM Architecture with Oxide-Semiconductor Channel through Process and Device Simulation.”
Abstract Excerpt: “We investigate a monolithically stackable OSC-based 3D-DRAM cell using an integrated framework combining process emulation, TCAD device simulation, parasitic extraction, and analytical modeling.”
Find the technical paper here. July 2026.
J. Hong et al., “Optimization of 3D-DRAM Architecture with Oxide-Semiconductor Channel through Process and Device Simulation,” in IEEE Journal of the Electron Devices Society, doi: 10.1109/JEDS.2026.3715074.
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