A new technical paper titled “A Cryogenic Ultra-Thin Body SiGeSn Transistor” was published by researchers at TU Wien, Johannes Kepler University, Universidad de Granada, and Max Planck Institute for Sustainable Materials.
Abstract
“Transistors capable of operating at cryogenic temperatures are key components for the fast and energy-efficient control and readout of qubits. However, the ultra-low power requirements and performance metrics are not met by conventional complementary metal oxide semiconductor technology, which has been optimized for room-temperature operation. Here, we propose to enhance Si-based Schottky junction field-effect transistors with ultra-thin layers of SiGeSn to address these issues. By combining single-elementary Al contacts to avoid dopant freeze-out and utilizing a multi-gate transistor architecture, which suppresses reverse junction leakage, a fivefold increase in on-current and a threefold increase in peak transconductance were achieved compared to a Si reference device. Measurements down to 5 K revealed a drain current modulation over nine orders of magnitude with improved inverse subthreshold slopes of 20 mV/dec below 50 K and 50% reduced threshold voltages, while the on-currents remain mostly temperature-independent, making the system interesting for cryogenic computing.”
Find the technical paper here. Published December 2025.
A. Fuchsberger et al., “A Cryogenic Ultra-Thin Body SiGeSn Transistor,” in IEEE Journal of the Electron Devices Society, vol. 14, pp. 24-29, 2026, doi: 10.1109/JEDS.2025.3647706. Creative commons license.
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