tag: CD-SEM

Innovative Scalable Design-Based Care Area Methodology For Defect Monitoring In Production
By KLA - 17 May, 2018 - Comments: 0

By Ian Tolle, GlobalFoundries, and Ankit Jain, KLA-Tencor Abstract The use of design-based care areas on inspection tools [1, 2] to characterize defects has been well established in recent years. However, the implementation has generally been limited to specific engineering use cases, due to the complexity involved with care area creation and inspection recipe setup. Furthermore, creating, ... » read more

Improving Optical Overlay And Measurement
By Adam Ge - 19 Oct, 2017 - Comments: 0

By Adam Ge and Shimon Levi Patterning challenges for the semiconductor industry are growing as the number of multi-patterned layers being used in the 10nm and beyond nodes increase. Patterning requires highly accurate overlay which has always been an issue, but with the added complexities of multi-patterning, smaller dimensions and subsequent tightening overlay error budget, it is now a majo... » read more

Patterning Problems Pile Up
By Mark LaPedus - 20 Mar, 2017 - Comments: 4

Chipmakers are ramping up 16nm/14nm finFET processes, with 10nm and 7nm now moving into early production. But at 10nm and beyond, chipmakers are running into a new set of problems. While shrinking feature sizes of a device down to 10nm, 7nm, 5nm and perhaps beyond is possible using current and future fab equipment, there doesn't seem to be a simple way to solve the edge placement error (EPE)... » read more

Fractilia: Pattern Roughness Metrology
By Mark LaPedus - 21 Feb, 2017 - Comments: 1

A new startup has emerged and unveiled a technology that addresses one of the bigger but less understood problems in advanced lithography--pattern roughness. The startup, called Fractilia, is a software-based metrology tool that analyzes the CD-SEM images of pattern roughness on a wafer. Fractilia, a self-funded startup, is led by Chris Mack and Ed Charrier. Mack, known as the gentleman sc... » read more

Can We Measure Next-Gen FinFETs?
By Mark LaPedus - 21 Nov, 2016 - Comments: 6

After ramping up their respective 16nm/14nm finFET processes, chipmakers are moving towards 10nm and/or 7nm, with 5nm in R&D. But as they move down the process roadmap, they will face a new set of fab challenges. In addition to lithography and interconnects, there is metrology. Metrology, the science of measurements, is used to characterize tiny films and structures. It helps to boost yi... » read more

Mask Maker Worries Grow
By Mark LaPedus - 22 Sep, 2016 - Comments: 0

Photomasks are becoming more complex and expensive at each node, thereby creating a number of challenges on several fronts. For one thing, the features on the [getkc id="265" kc_name="photomask"] are becoming smaller and more complex at each node. Second, the number of masks per mask-set are increasing as a result of multiple patterning. Third, it costs more to build and equip a new mask fab... » read more

Speeding Up Mask Production
By Mark LaPedus - 12 Sep, 2016 - Comments: 0

Chip production is becoming more complex and expensive at each node. As a result, chipmakers require a growing number of new manufacturing technologies to enable the next wave of devices at advanced nodes. In the fab, for example, the most obvious need is extreme ultraviolet ([gettech id="31045" comment="EUV"]) lithography. In addition, chipmakers also need a new class of atomic-level proces... » read more

Inside Inspection And Metrology
By Mark LaPedus - 18 Dec, 2015 - Comments: 0

Semiconductor Engineering sat down to talk about inspection, metrology and other issues with Mehdi Vaez-Iravani, vice president of advanced imaging technologies at Applied Materials. What follows are excerpts of that conversation. SE: Today, the industry is working on a new range of complex architectures, such as 3D NAND and finFETs. For these technologies, the industry is clearly struggling... » read more

Measuring FinFETs Will Get Harder
By Mark LaPedus - 19 Nov, 2015 - Comments: 2

The industry is gradually migrating toward chips based on finFET transistors at 16nm/14nm and beyond, but manufacturing those finFETs is proving to be a daunting challenge in the fab. Patterning is the most difficult process for finFETs. But another process, metrology, is fast becoming one of the biggest challenges for the next-generation transistor technology. In fact, [getkc id="252" kc_n... » read more

Taming Mask Metrology
By Mark LaPedus - 22 Oct, 2015 - Comments: 0

For years the IC industry has worried about a bevy of issues with the photomask. Mask costs are the top concern, but mask complexity, write times and defect inspection are the other key issues for both optical and EUV photomasks. Now, mask metrology, the science of measuring the key parameters on the mask, is becoming a new challenge. On this front, mask makers are concerned about the critic... » read more

← Older posts Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2024 SMG   |  Terms of Service  |  Privacy Policy