tag: CMOS

Modeling High-Performance Analog And RF Circuits In Nanometer-Scale CMOS
By Mentor, a Siemens Business - 12 Mar, 2015 - Comments: 0

By Mick Tegethoff and David Lee Today’s consumer, communication, and computer electronic devices have clocks, communication interfaces, and high-speed signal-conditioning circuits that operate at radio frequencies (RF). Providing price-competitive products often requires monolithic integration of these circuits in low-power nanometer-scale bulk CMOS silicon. This is a worst-case scenario for... » read more

Still Waiting For III-V Chips
By Mark LaPedus - 19 Feb, 2015 - Comments: 0

For years, chipmakers have been searching for an alternative material to replace traditional silicon in the channel for advanced CMOS devices at 7nm and beyond. There’s a good reason, too: At 7nm, silicon will likely run out of steam in the channel. Until recently, chipmakers were counting on III-V materials for the channels, at least for NFET. Compared to silicon, III-V materials provide ... » read more

And the Winner is…
By Brian Bailey - 18 Dec, 2014 - Comments: 0

Semiconductor Engineering now has its first full year under its belt, and I have to say it has been an incredible year. Not only did we exceed a million page views in our first year, but we also got started on the Knowledge Center, an endeavor the likes of which has never been attempted in our industry. It is still very young and has a lot of growing up to do, but it is a wonderful start. We wo... » read more

IBM, Intel And TSMC Roll Out finFETs
By Mark LaPedus - 14 Dec, 2014 - Comments: 0

At the IEEE International Electron Devices Meeting (IEDM) in San Franciso, IBM, Intel and Taiwan Semiconductor Manufacturing Co. Ltd. (TSMC) this week will separately present the latest details of their respective 16nm/14nm finFET technologies. As expected, Intel and TSMC will continue to use bulk CMOS. IBM will continue to go with rival silicon-on-insulator (SOI) technology. At IEDM, Intel ... » read more

The Week In Review: Manufacturing
By Mark LaPedus - 17 Oct, 2014 - Comments: 0

It’s official: IBM appears to be exiting the chip business. After months of talks, IBM has agreed to pay GlobalFoundries $1.5 billion to take Big Blue’s chip unit off its hands, according to reports from Bloomberg. IBM will also receive $200 million worth of assets, according to the reports. At the upcoming IEEE International Electron Devices Meeting (IEDM), Intel and IBM will present... » read more

Moving To Wide Bandgap Chips
By Kenji Tsuda - 05 Sep, 2014 - Comments: 0

The search for new materials to replace CMOS has been in full swing for decades, but in spite of successes in limited niche markets, bulk CMOS remains king. That’s beginning to change, however, as CMOS runs out of steam at advanced process nodes and as the priorities of chipmakers change from pure performance to energy efficiency. And for such applications as automotive electronics for hyb... » read more

Challenges In 3D Resists
By Katherine Derbyshire - 24 Mar, 2014 - Comments: 2

3D integration straddles the line between CMOS fabs and packaging and assembly houses. Depending on the structure being fabricated, the most appropriate process might be more “CMOS-like” or more “package-like.” For example, in CMOS fabs lithography means spin-on photoresist, exposed by a high precision stepper. Inherent in this approach is an assumption that the wafer surface is flat... » read more

What Goes Around Comes Around: Moore’s Law At 10nm And Beyond
By Greg Yeric - 13 Feb, 2014 - Comments: 2

Modified by Greg Yeric from original by Eric Fischer Gordon Moore penned his famous observation in an era when the people developing the process were also the people designing the circuits. Over time, things got more complicated and work specialization set in, but all was well in the world for many years as the fabs kept delivering on Moore’s Law. Yes, designers had to come up with lot... » read more

The List Of Unknowns Grows After Silicon
By Katherine Derbyshire - 07 Feb, 2014 - Comments: 3

As discussed earlier in this series, most proposed alternative channel schemes depend on germanium channels for pMOS transistors, and InGaAs channels for nMOS transistors. Of the two materials, InGaAs poses by far the more difficult integration challenges. Germanium has been present in advanced silicon CMOS fabs for several technology generations, having been introduced used in strained silicon... » read more

What’s After CMOS?
By Mark LaPedus - 24 Jan, 2014 - Comments: 3

Chipmakers continue to scale the CMOS transistor to finer geometries, but the question is for how much longer. The current thinking is that the CMOS transistor could scale at least to the 3nm node in the 2021 timeframe. And then, CMOS could run out of gas, prompting the need for a new switch technology. So what’s after the CMOS-based transistor? Carbon nanotubes and graphene get the most a... » read more

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