Ultralow-voltage retention SRAM; epitaxial growth for 3D DRAM; 3DIC electromigration in Cu-Cu joints; fine-tuning of spiking Q-networks; optical next-gen reservoir computing; double intra-cavity VCSELs; non-ideal subthreshold swing in CNTs; SystemC-based virtual platforms using FMI.
New technical papers recently added to Semiconductor Engineering’s library:
| Name of Paper | Research Organizations |
|---|---|
| A New Ultralow-Voltage Retention SRAM Cell Enhancing Noise Immunity | Tokyo Institute of Technology |
| Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications | imec, Ghent University |
| In Situ Atomic-Scale Investigation of Electromigration Behavior in Cu–Cu Joints at High Current Density | NYCU, ITRI |
| Hardware-Aware Fine-Tuning of Spiking Q-Networks on the SpiNNaker2 Neuromorphic Platform | TU Dresden, ScaDS.AI, Centre for Tactile Internet with Human-in-the-Loop |
| Optical next generation reservoir computing | Sorbonne, CNRS, Tsinghua University |
| Thermal Characteristics of a Double Intra-Cavity Contact VCSEL for Cryogenic Optical Links | Tampere University |
| Non-ideal subthreshold swing in aligned carbon nanotube transistors due to variable occupancy discrete charge traps | Berkeley Lab, Sandia |
| FMI Meets SystemC: A Framework for Cross-Tool Virtual Prototyping | RWTH Aachen University, MachineWare GmbH, tracetronic GmbH |
Find more semiconductor research papers here.
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