A new technical paper titled “Modeling and Optimization of Two-Terminal Spin-Orbit-Torque MRAM” was published by researchers at Georgia Institute of Technology, MIT, and Cornell University.
Abstract
“This paper presents physical modeling and benchmarking for two-terminal spin-orbit torque magnetic random-access memory (2T-SOT-MRAM). The results indicate that the common SOT materials that provide only in-plane torque can provide little to no improvement over spin-transfer-torque (STT) MRAM in terms of write energy. However, emerging SOT materials that provide out-of-plane torques with efficiencies as small as 0.1 can result in significant improvements in the write energy for such 2-terminal devices, especially when the magnet lateral dimensions are scaled down to 30 or 20 nm. Additionally, a novel 2T-SOT MRAM device is proposed that can increase the path electrons pass through the SOT layer; hence, increasing the generated spin current and the energy efficiency of the device. Our benchmarking results indicate that an out-of-plane SOT efficiency of 0.051 for 20nm wide devices can result in write energies approaching SRAM at the 7nm technology node.”
Find the technical paper here. December 2025.
Shazon, Md Nahid Haque, Piyush Kumar, Luqiao Liu, Daniel C. Ralph, and Azad Naeemi. “Modeling and Optimization of Two-Terminal Spin-Orbit-Torque MRAM.” arXiv preprint arXiv:2512.06215 (2025).
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