tag: finFET

Has The IC Industry Hit A ‘Red Brick Wall’?
By Mark LaPedus - 19 Jun, 2014 - Comments: 2

In the mid-1980s, the semiconductor industry was in a crisis. Chipmakers were looking for ways to break the magical one-micron barrier. Many thought X-ray lithography would be required to break the barrier, but as it turned out, traditional optical technology did the trick. And the industry marched on. Then, in 2000 or so, the IC industry was nearing the so-called “red brick wall,” which... » read more

The Week In Review: Manufacturing
By Mark LaPedus - 25 Apr, 2014 - Comments: 0

Worldwide semiconductor capital equipment spending is projected to total $37.5 billion in 2014, an increase of 12.2% from 2013 spending of $33.5 billion, according to Gartner. Capital spending will increase 5.5% in 2014 as the industry begins to recover from the recent economic downturn. The 3D NAND market will take longer to develop. Samsung has shipped a 3D NAND device. Micron and SK Hynix... » read more

FinFET Based Designs: Power Analysis Considerations
By Aveek Sarkar - 10 Apr, 2014 - Comments: 2

Design teams working on mobile, computing, networking and other low power, high performance IPs and SoCs are migrating to FinFET-based technologies. However the benefits from their smaller sizes and the ability to deliver consistent performance at ultra-low sub-1V nominal supply voltage levels is outweighed by the worsening of power noise and reliability. As mentioned in an earlier blog on Powe... » read more

Looking Beyond Moore’s Law
By Mark LaPedus - 20 Feb, 2014 - Comments: 2

For decades, chip scaling has followed a simple linear curve. In this curve, the transistor gate-pitch scales at 0.7x every two years. This is the driving force behind Moore’s Law, which states that the number of transistors per chip roughly doubles every two years. But starting at the 16nm/14nm node, there is a change taking place in chip scaling. According to a chart from Imec, there are... » read more

What Goes Around Comes Around: Moore’s Law At 10nm And Beyond
By Greg Yeric - 13 Feb, 2014 - Comments: 2

Modified by Greg Yeric from original by Eric Fischer Gordon Moore penned his famous observation in an era when the people developing the process were also the people designing the circuits. Over time, things got more complicated and work specialization set in, but all was well in the world for many years as the fabs kept delivering on Moore’s Law. Yes, designers had to come up with lot... » read more

Week In Review: Manufacturing, Design, Test
By Mark LaPedus - 24 Jan, 2014 - Comments: 0

Look for a nasty political campaign in Idaho, according to Bloomberg. Business leaders from Micron Technology and others in Idaho are endorsing the incumbent Republican candidate over a Tea Party challenger. The challenger, Bryan Smith, is a conservative Republican running for Idaho’s second congressional district. He is running against 16-year incumbent Mike Simpson. Simpson is supposedly pr... » read more

Mixed Signals Seen For Fab Tool Industry
By Mark LaPedus - 14 Jan, 2014 - Comments: 2

After a slight downturn in 2013, the semiconductor equipment market is expected to rebound and see solid growth in 2014, according to forecasters at SEMI’s Industry Strategy Symposium (ISS) at Half Moon Bay, Calif. Gartner, IC Insights and VLSI Research separately projected strong growth in the fab tool industry in 2014. But on the downside, the number of large fab tool buyers continues to... » read more

Manufacturing Bits: Dec. 17
By Mark LaPedus - 17 Dec, 2013 - Comments: 0

Implantable TFETs At the recent IEEE International Electron Devices Meeting (IEDM) in Washington, D.C., a number of companies, R&D organizations and universities described new breakthroughs in perhaps the next big thing in semiconductors--the tunnel field-effect transistor (TFET). Aimed for the 5nm node, TFETs are steep sub-threshold slope transistors that can scale the supply voltages bel... » read more

The “Last Simple Node” And the Internet of Things
By Brian Fuller - 17 Oct, 2013 - Comments: 0

Power, performance and size are key targets that will enable the expected explosion of the Internet of Things (IoT). Today, most observers see the path to that running directly through 16/14nm finFET and below for the node’s ability to manage power and size and boost integration. Geoff Lees isn’t your average observer. The vice president and general manager of Freescale’s microcon... » read more

Power Grid Analysis Heats Up At 20nm
By Ann Mutschler - 12 Sep, 2013 - Comments: 0

By Ann Steffora Mutschler Do a simple Internet search for the term ‘power grid analysis’ and most of the results are academic sources. However, given the physics of either planar or finFET at 20nm and below, the power grid will see significant impacts. Overall, there are a number of technical implications of migrating from 28nm down to 20, 16 or 14 nm, with further impacts of moving fro... » read more

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