Week In Review: Semiconductor Manufacturing, Test


The CHIPS for America team at the U.S. Department of Commerce named the selection committee who will select board members for the nonprofit entity that will likely be managing the National Semiconductor Technology Center (NSTC). Members include John Hennessy, chairman of Alphabet; Jason Matheny, president and CEO of the RAND Corporation; Don Rosenberg, fellow in residence at UCSD’s School of ... » read more

Blog Review: June 21


Synopsys' Vikram Bhatia identifies four trends driving the migration of EDA tools and chip design workloads to the cloud, from ever-increasing compute and time-to-market demands to advanced cybersecurity features. Cadence's Veena Parthan checks out how computational fluid dynamics and finite element analysis can help improve aquaculture with sustainable fish cage nets that minimize stagnatio... » read more

193i Lithography Takes Center Stage…Again


Cutting-edge lithography to create smaller features increasingly is being supplemented by improvements in lithography for mature process nodes, both of which are required as SoCs and complex chips are decomposed and integrated into advanced packages. Until the 7nm era, the primary goal of leading-edge chipmakers was to pack everything onto a single system-on-chip (SoC) using the same process... » read more

Smart Manufacturing Makes Gains In Chip Industry


Lights out manufacturing is gaining steam across the semiconductor industry, accelerating productivity, improving quality, and reducing costs and environment impact. These benefits are the result of years of strategic investments in technologies like machine-to-machine communication, data analytics, and robotics to achieve higher levels of autonomy. Semiconductor factories have long depen... » read more

Improving DRAM Device Performance Through Saddle Fin Process Optimization


As DRAM technology nodes have scaled down, access transistor issues have been highlighted due to weak gate controllability. Saddle Fins with Buried Channel Array Transistors (BCAT) have subsequently been introduced to increase channel length, prevent short channel effects, and increase data retention times [1]. However, at technology nodes beyond 20nm, securing sufficient device performance (su... » read more

Blog Review: June 14


Synopsys' Richard Solomon and Gary Ruggles examine the Compute Express Link (CXL) protocol and how it could unlock new ways of doing computing such as enabling efficient heterogeneous computing architectures, accelerating data-intensive workloads, and facilitating advanced real-time analytics. Cadence's Andre Baguenie explains how to convert an electrical signal to a logic value using the Ve... » read more

Chip Industry’s Technical Paper Roundup: June 5


New technical papers recently added to Semiconductor Engineering’s library: [table id=105 /] More Reading Technical Paper Library home » read more

3D Memory Structures: Common Hole And Tilt Metrology Techniques and Capabilities


A technical paper titled "Inline metrology of high aspect ratio hole tilt and center line shift using small-angle x-ray scattering" was published by researchers at Bruker Nano and Lam Research. Abstract: "High aspect ratio (HAR) structures found in three-dimensional nand memory structures have unique process control challenges. The etch used to fabricate channel holes several microns deep... » read more

Etch Processes Push Toward Higher Selectivity, Cost Control


Plasma etching is perhaps the most essential process in semiconductor manufacturing, and possibly the most complex of all fab operations next to photolithography. Nearly half of all fab steps rely on a plasma, an energetic ionized gas, to do their work. Despite ever-shrinking transistor and memory cells, engineers continue to deliver reliable etch processes. “To sustainably create chips... » read more

The Impact Of Metal Gate Recess Profile On Transistor Resistance And Capacitance


In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize the metal gate recess dimensions. However, there are limits to reducing this capacitance if you simply remove more of the metal material, since this can modify capacitance unexpectedly through chan... » read more

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