Improving DDR5; algorithm-driven on-chip integration; AFM for hybrid bonding-ready copper pads; proton radiation effects; LLM-based development for HW design; 2T-SOT-MRAM; thermal modeling for 2.5D/3D heterogeneous chiplet systems; nano gap MEMS switches for power gating.
New technical papers recently added to Semiconductor Engineering’s library:
| Name of Paper | Research Organizations |
|---|---|
| BARD: Reducing Write Latency of DDR5 Memory by Exploiting Bank-Parallelism | Georgia Tech |
| Probing the Nanoscale Onset of Plasticity in Electroplated Copper for Hybrid Bonding Structures via Multimodal Atomic Force Microscopy | NIST, Intel, Colorado School of Mines |
| Ultra-Fast, Low-Resistance Nano Gap Electromechanical Switch for Power Gating Applications | KAIST, Chonnam National University |
| Algorithm-Driven On-Chip Integration for High Density and Low Cost | USC |
| Effects of Proton Radiation on Tin Oxide: Implications for Space Electronics | Kyungpook National University, Korea Atomic Energy Research Institute |
| LLM-based Behaviour Driven Development for Hardware Design | University of Bremen/ DFKI |
| Modeling and Optimization of Two-Terminal Spin-Orbit-Torque MRAM | Georgia Tech, MIT, Cornell University |
| 3D-ICE 4.0: Accurate and efficient thermal modeling for 2.5D/3D heterogeneous chiplet systems | EPFL, Universidad Complutense de Madrid |
Find more semiconductor research papers here.
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