Chip Industry Technical Paper Roundup: Nov. 4

MIT’s AI accelerators and processors survey; SOT-based MRAM design at 7nm; in-DRAM TRNG using simultaneous multiple-row activation; chiplet-locality for memory mapping; FeRAM vs. DRAM performance; 180 automotive SoC vulnerabilities; EUV + DSA progress; multimodal chip physical design engineer assistant.

popularity

New technical papers recently added to Semiconductor Engineering’s library:

Technical Paper Research Organizations
Lincoln AI Computing Survey (LAICS) and Trends: Survey On Accelerators and Processors for Inference, With Peak Performance And Power Comparisons MIT Lincoln Laboratory Supercomputing Center
Comprehensive device to system co-design for SOT-MRAM at the 7nm node Georgia Institute of Technology, Intel
In-DRAM True Random Number Generation Using Simultaneous Multiple-Row Activation: An Experimental Study of Real DRAM Chips ETH Zurich, CISPA
Leveraging Chiplet-Locality for Efficient Memory Mapping in Multi-Chip Module GPUs Electronics and Telecommunications Research Institute (ETRI), Sungkyunkwan University
Benchmarking of FERAM-Based Memory System by Optimizing Ferroelectric Device Model Georgia Tech, imec, National Technical University of Athens
An AUTOSAR-Aligned Architectural Study of Vulnerabilities in Automotive SoC Software Chalmers University of Technology, University of Gothenburg
Directed self-assembly of block copolymers for high-precision patterning in the era of extreme ultraviolet lithography University of Chicago, Lawrence Berkeley National Laboratory, Argonne National Laboratory
Multimodal Chip Physical Design Engineer Assistant National Taiwan University, UCLA, NVIDIA Research

Find more semiconductor research papers here.



Leave a Reply


(Note: This name will be displayed publicly)